Journal ArticleDOI
Dislocation Etch for (100) Planes in Silicon
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TLDR
In this paper, a dilute aqueous solution of an alkali dichromate and hydrofluoric acid is used to reveal dislocations and other lattice defects in (100) planes of silicon.Abstract:
A new etch composed of a dilute aqueous solution of an alkali dichromate and hydrofluoric acid, for suitably revealing dislocations and other lattice defects in (100) planes of silicon, is reported. The etch is fast (typically 5 min), brings out both lineage (low angle grain boundaries) and slip lines, and works over a wide range of resistivities for n‐ and p‐type material. The application of the etch is not restricted to (100) planes; dislocation etch pits are formed on all crystallographic orientations. The same etching characteristics were found with dilute aqueous solutions prepared from various chromium compounds and hydrofluoric acid.read more
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Oxygen precipitation in silicon
TL;DR: A review of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon is presented in this article, where the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results.
Journal ArticleDOI
Silicon molecular beam epitaxy
TL;DR: The silicon molecular beam epitaxy (MBE) technique has only been used in silicon device applications in the last 5 years as discussed by the authors, and it is expected that in the near future silicon MBE will be applied to a much wider range of silicon devices including silicon integrated circuits.
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Simultaneous removal of chromium(VI) and fluoride by electrocoagulation–electroflotation: Application of a hybrid Fe-Al anode
TL;DR: In this paper, a combined two-step EC-EF process was designed to simultaneously remove Cr(VI) and fluoride from pretreated acidic semiconductor effluents, where a hybrid Fe-Al was used as sacrificial anode and stainless steel as cathode.
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The surface energy of Si, GaAs, and GaP
C. Messmer,J. C. Bilello +1 more
TL;DR: In this paper, the surface energy of various planes in Si, GaAs, and GaP was measured by the use of a modified spark discharge method, previously used successfully in metals.
Journal ArticleDOI
Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies
Stephen W. Bedell,Davood Shahrjerdi,Bahman Hekmatshoar,K. Fogel,Paul A. Lauro,John A. Ott,Norma E. Sosa,Devendra K. Sadana +7 more
TL;DR: In this paper, the authors demonstrate the removal of surface layers of photovoltaic materials including silicon, germanium, and III-Vs by controlled spalling technology, which is extremely simple, versatile, and applicable to a wide range of substrates.