Dopant-driven enhancements in the optoelectronic properties of laser ablated ZnO: Ga thin films

TLDR: Theoretically and experimentally evaluated optoelectronic properties of GZO (Ga-doped zinc oxide) were correlated in the present article as mentioned in this paper, where the pulsed laser deposition technique was used to fabricate gZO thin films on p-GaN, Al2O3, and p-Si substrates.

Abstract: Theoretically and experimentally evaluated optoelectronic properties of GZO (Ga-doped zinc oxide) were correlated in the present article. Density functional theory and Hubbard U (DFT + Ud + Up) first-principle calculations were used for the theoretical study. The pulsed laser deposition technique was used to fabricate GZO thin films on p-GaN, Al2O3, and p-Si substrates. X-ray diffraction graphs show single crystal growth of GZO thin films with (002) preferred crystallographic orientation. The chemical composition was studied via energy dispersive X-ray spectroscopy, and no other unwanted impurity-related peaks were found, which indicated the impurity-free thin film growth of GZO. Field emission scanning electron microscopic micrographs revealed noodle-, seed-, and granular-like structures of GZO/GaN, GZO/Al2O3, and GZO/Si, respectively. Uniform growth of GZO/GaN was found due to fewer mismatches between ZnO and GaN (0.09%). Hall effect measurements in the van der Pauw configuration were used to check elec...