Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field‐Effect Transistors
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Citations
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References
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Frequently Asked Questions (16)
Q2. What is the reason for the electrical instability of organic transistors?
The authors use thermally grown SiO2 as gate dielectric and determine the dynamics of the electrical instability of organic transistors as a function of time and temperature in a vacuum and in the dark.
Q3. How can the PTAA transistors be fitted?
The electrical transport of the PTAA transistors in accumulation can be fitted by using an exponential density of transport states with a characteristic temperature of 450 K.
Q4. What is the simplest method of forming a transistor?
Field-effect transistors were fabricated using heavily doped p-type Si wafers as the common gate electrode with a 200 nm thermally oxidized SiO2 layer as the gate dielectric.
Q5. What is the reason for the electrical instability of PTAA transistors?
The transistors were fabricated using heavily doped p-type Si wafers as the common gate electrode with a 200 nm thermally oxidized SiO2 layer as the gate dielectric.
Q6. What is the frequency prefactor of a-Si transistors?
In the case of siliconbased transistors the frequency prefactor, m, ranges from 106 s–1 to 1010 s–1 depending on the silicon crystallinity.
Q7. Why are PTAA transistors more stable at higher temperatures?
Due to the high activation energy of a-Si transistors, at higher temperatures PTAA transistors are much more stable than their a-Sicounterparts.
Q8. What are the advantages of organic and amorphous silicon field-effect transistors?
The advantages of their application are the easy processing, for example, spin-coating and ink-jet printing, without a temperature hierarchy, and their mechanical flexibility.
Q9. What is the HOMO energy level of polytriarylamine?
This organic semiconducting polymer is amorphous and air stable, with a highest occupied molecular orbital (HOMO) energy level of about –5.1 eV (1 eV = 1.602 × 10–19 J), and yields reproducible transistors with a mobility of about 10–3–10–2 cm2 V–1s–1.
Q10. How did the authors measure the transfer curves of a-Si transistors?
The authors investigated the recovery by grounding both the drain and gate bias of stressed transistors and measuring the transfer curves as a function of time and temperature.
Q11. What is the threshold voltage shift in organic transistors?
The authors observe that, in vacuum, a coverage of the SiO2 gate dielectric with HMDS ranging from 0 % to approximately 70 % does not influence the threshold-voltage shift.
Q12. What is the effect of the voltage shift on the transistor?
In practical applications such as integrated circuits and active matrix displays, the transistor is only temporarily switched on.
Q13. How was the stress of the gate bias measured?
the gate-bias stress was further investigated using a drain bias of 0 V.Stress was measured as a function of time and temperature.
Q14. What temperature was used to measure the trapping dynamics?
To further investigate the trapping dynamics, stress measurements on the PTAA transistors were performed at various temperatures.
Q15. How long does the relaxation time of organic transistors last?
The relaxation time is observed to be in the order of 107 s (ca. 4 months) at room temperature and is comparable to the best values reported for a-Si-based transistors.
Q16. What is the author's permission to use the text?
Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).