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A high-mobility electron-transporting polymer for printed transistors

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TLDR
A highly soluble and printable n-channel polymer exhibiting unprecedented OTFT characteristics under ambient conditions in combination with Au contacts and various polymeric dielectrics is reported and all-printed polymeric complementary inverters have been demonstrated.
Abstract
Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin-film transistor (OTFT) fabrication. In addition to having excellent charge-transport characteristics in ambient conditions, such materials must meet other key requirements, such as chemical stability, large solubility in common solvents, and inexpensive solution and/or low-temperature processing. Furthermore, compatibility of both p-channel (hole-transporting) and n-channel (electron-transporting) semiconductors with a single combination of gate dielectric and contact materials is highly desirable to enable powerful complementary circuit technologies, where p- and n-channel OTFTs operate in concert. Polymeric complementary circuits operating in ambient conditions are currently difficult to realize: although excellent p-channel polymers are widely available, the achievement of high-performance n-channel polymers is more challenging. Here we report a highly soluble ( approximately 60 g l(-1)) and printable n-channel polymer exhibiting unprecedented OTFT characteristics (electron mobilities up to approximately 0.45-0.85 cm(2) V(-1) s(-1)) under ambient conditions in combination with Au contacts and various polymeric dielectrics. Several top-gate OTFTs on plastic substrates were fabricated with the semiconductor-dielectric layers deposited by spin-coating as well as by gravure, flexographic and inkjet printing, demonstrating great processing versatility. Finally, all-printed polymeric complementary inverters (with gain 25-65) have been demonstrated.

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Journal ArticleDOI

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

TL;DR: The focus of this review will be on the performance analysis of π-conjugated systems in OFETs, a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals that provide an important insight into the charge transport of ρconjugate systems.
Journal ArticleDOI

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI

π-Conjugated Polymers for Organic Electronics and Photovoltaic Cell Applications†

TL;DR: In this article, a review of π-conjugated polymeric semiconductors for organic thin-film (or field effect) transistors (OTFTs or OFETs) and bulk-heterojunction photovoltaic (or solar) cell (BHJ-OPV or OSC) applications are summarized and analyzed.
Journal ArticleDOI

An ultra-lightweight design for imperceptible plastic electronics

TL;DR: In this paper, the authors present a platform that makes electronics both virtually unbreakable and imperceptible on polyimide polysilicon elastomers, which can be operated at high temperatures and in aqueous environments.
References
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TL;DR: New semiconducting liquid-crystalline thieno[3,2-b ]thiophene polymers are reported on, the enhancement in charge-carrier mobility achieved through highly organized morphology from processing in the mesophase, and the effects of exposure to both ambient and low-humidity air on the performance of transistor devices.
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Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

TL;DR: This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as ∼15 cm2/V·s and subthreshold slopes as low as 2nF·V/decade·cm2.
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