Journal ArticleDOI
Effect of argon ion implantation dose on silicon Schottky barrier characteristics
S. Ashok,H. Kräutle,H. Beneking +2 more
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In this paper, the electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low-energy (10 keV) argon ion implantation have been studied as a function of Ar+ ion dose.Abstract:
The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low‐energy (10 keV) argon ion implantation have been studied as a function of Ar+ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×1011 cm−2, well below the amorphization threshold dose for Si. In conjunction with the ion energy threshold established earlier for Si surface damage effects (∼25 eV), these results outline fundamental limits on the effect of ion‐assisted dry etching processes on Si surface barriers.read more
Citations
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Recent advances in Schottky barrier concepts
TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
Journal ArticleDOI
The physics and chemistry of the Schottky barrier height
TL;DR: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface as mentioned in this paper.
Journal ArticleDOI
Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding
TL;DR: In this article, the interface resistance of n + -Si/n + -GaAs junctions was found to be 0.112 Ω&cm 2, which is the smallest value observed in all the samples.
Journal ArticleDOI
Effects of annealing on electrical properties of Si/Si junctions by surface-activated bonding
TL;DR: In this paper, the potential barrier heights at Si/Si interfaces annealed at different temperatures from the results of transmission electron microscopy (TEM) observations and currentvoltage (I-V) measurements at various ambient temperatures were extracted.
Journal ArticleDOI
Influence of He-ion irradiation on the characteristics of Pd/n-Si0.90Ge0.10/Si Schottky contacts
TL;DR: The Schottky barrier properties of He-ion irradiated Pd/n-Si09Ge0.10 contacts have been measured in the temperature range from 100 to 300 K.
References
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Journal ArticleDOI
The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
TL;DR: In this paper, the properties of d.c. sputtered molybdenum-silicon Schottky diodes are described and a model is proposed which is capable of explaining most features of the observed C-V and I-V characteristics.
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Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
TL;DR: In this article, anomalous rectifying behavior has been observed in molybdenum/silicon Schottky barrier diodes produced by ion-beam sputter deposition of Mo on singlecrystal Si.
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Modification of Schottky barriers in silicon by reactive ion etching with NF3
TL;DR: In this paper, reaction ion etching of silicon with NF3 gas has been found to alter the silicon surface such that the Schottky barrier height is systematically changed with ion energy.
Journal ArticleDOI
Electrical Defects in Silicon Introduced by Sputtering and Sputter‐Etching
TL;DR: In this paper, it was shown that the damage is caused by rebounded Ar atoms in the semiconductor near the metal-semiconductor junction, and that this voltage is high enough charged centers will be introduced.
Journal ArticleDOI
Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching
R. Singh,Stephen J. Fonash,S. Ashok,P. J. Caplan,P. J. Caplan,J. Shappirio,J. Shappirio,M. Hage‐Ali,J. Ponpon +8 more
TL;DR: In this paper, the role of processing-induced changes in Si, subjected to ion beam etching, has been investigated and it is shown that these changes can be related to the primary ion beam used in ionbeam etching.