Book ChapterDOI
Effect of carrier-carrier collisions on RF performance of millimeter-wave IMPATT sources
Prasit Kumar Bandyopadhyay,Subhendu Chakraborty,Arindam Biswas,Aritra Acharyya,Aloke Bhattacharjee +4 more
- pp 409-413
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The article was published on 2016-05-09. It has received 0 citations till now.read more
References
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Journal ArticleDOI
Large-signal analysis of a silicon Read diode oscillator
D.L. Scharfetter,H.K. Gummel +1 more
TL;DR: In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.
Journal ArticleDOI
Millimeter-Wave CW IMPATT Diodes and Oscillators
T.A. Midford,R.L. Bernick +1 more
TL;DR: In this article, the current state of the art of silicon CW millimeter-wave IMPATT diodes and oscillators in the frequency range from 30 to 250 GHz is summarized.
Journal ArticleDOI
D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz
TL;DR: In this paper, a beam-lead process was used to design the active layer of a double drift (DD) and double read (DLHL) IMPATT diodes, with the goal of achieving the maximum negative resistance of the device for a given DC power density.
Journal ArticleDOI
Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime
Aritra Acharyya,Jit Chakraborty,Kausik Das,Subir Datta,Pritam De,Suranjana Banerjee,Janmajoy Banerjee +6 more
TL;DR: In this article, the authors carried out the large-signal characterization of silicon-based double-drift region (DDR) impact avalanche transit time (IMPATT) devices designed to operate up to 0.5 THz using a large-Signal simulation method developed by the authors based on non-sinusoidal voltage excitation.