Journal ArticleDOI
Effect of electron irradiation on lithium-doped silicon.
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TLDR
The initial carrier removal rate was 2.2 cm −1 in float zone silicon and the carrier concentration varied exponentially with electron fluence as mentioned in this paper, indicating that lithium is consumed in the production of defects.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1970-11-01. It has received 6 citations till now. The article focuses on the topics: Silicon & Float-zone silicon.read more
Citations
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A model for explaining the concentration quenching of thermoluminescence
TL;DR: The effect of concentration quenching (CQ) on luminescence efficiency has been investigated in this paper, where a formula has been developed for the dependence of the efficiency on the concentration, assuming that only activators not adjacent to other activators can emit luminecence.
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Recombination luminescence from electron‐irradiated Li‐diffused Si
TL;DR: In this article, a new irradiation-dependent luminescence band between 0.75 and 1.05 eV is observed in oxigen-lean Si with Li doping, which is dominated by a zero-phonon peak at 1.045 eV.
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Positron annihilation on defects in silicon irradiated with 15 MeV protons
Nikolay Arutyunov,Mohamed Elsayed,Mohamed Elsayed,Reinhard Krause-Rehberg,Valentin V. Emtsev,Gagik A. Oganesyan,Vitalii V. Kozlovski +6 more
TL;DR: It is argued that the value of activation energy of the isochronal annealing E(a) ≈ 0.74-0.59 eV is due to dissociation of the positron traps, which is accompanied by restoration of the electrical activity of the phosphorus atoms.
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Intrinsic superlinear dose dependence of thermoluminescence and optically stimulated luminescence at high excitation dose rates
TL;DR: In this article, the authors report on a model of one trapping state and one kind of recombination center which results in a superlinear filling of the center, and they follow this situation by writing the simultaneous nonlinear rate equations for the one-trap-one-recombination-center model and study the expected results by numerical simulation consisting of solving the equations with sets of the trapping parameters.
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Electron induced degradation and recovery under space conditions of lithium-doped silicon solar cells
M. Roux,R. Reulet,J. Bernard,D. Stievenard,D. Bielle-Daspet,M. Lagouin,Luis Castañer,J. Canigueral +7 more
TL;DR: In this article, the degradation of P/N lithium-doped solar cells irradiated by 1 MeV electrons is studied and it is shown that A centers ([V-01 complexes) and divancancies play a dominant role in the degradation.
References
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Journal ArticleDOI
Electrical Properties of Silicon Containing Arsenic and Boron
F. J. Morin,J. P. Maita +1 more
TL;DR: In this article, the authors measured the electrical conductivity and Hall effect of single-crystal silicon containing arsenic and boron and derived the intrinsic Hall mobility from Hall coefficient and conductivity.
Radiation damage in semiconductors.
TL;DR: In this article, the same enhancement of diffusion as with protons is observed in electron-irradiated silicon, but the effect is masked by thermal phenomena accompanying the adsorption of residual gases in the calorimeter chamber.
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Spin resonance in electron irradiated silicon
TL;DR: In this paper, the spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method.
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Irradiation Damage in Germanium and Silicon due to Electrons and Gamma Rays
TL;DR: In this paper, a simple model for atomic displacements by electrons of Seitz and Koehler is used to calculate the total number of displaced atoms in germanium and silicon due to electrons and gamma rays of energies up to 7 Mev.
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Energy Levels in Electron-Bombarded Silicon
TL;DR: In this paper, an electron trapping level is located 0.16 ev below the conduction band and a hole-trapping level 0.29 ev above the valence band.