Journal ArticleDOI
Effect of etching on the surface morphology and grain boundary parameters of Cu-rich CuInSe2 films
TLDR
In this article, the effects of the surface morphology and Cu2Se subphase with etching on the grain boundary parameters are discussed, as well as the effect of co-evaporating the constituent elements from three independently controlled sources on to glass slides.About:
This article is published in Thin Solid Films.The article was published on 1995-01-01. It has received 3 citations till now. The article focuses on the topics: Grain boundary & Etching (microfabrication).read more
Citations
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Journal ArticleDOI
Structural analysis and optical and electrical characterization of the ordered defect compound CuIn5Se8
Rachel Reena Philip,B. Pradeep +1 more
TL;DR: In this paper, thin polycrystalline films of the ordered defect compound CuIn5Se8 and CuInSe2 are prepared on soda lime glass substrates at temperature 623 K by coevaporation of the constituent elements.
Journal ArticleDOI
Single-step electrodeposition of CIS thin films with the complexing agent triethanolamine
TL;DR: In this paper, a single-step electrodeposition of CuInSe 2 (CIS) was enhanced by adding triethanolamine (TEA) into deposition bath, the CIS thin films were improved consequently in the form of polycrystalline cauliflower structures through the examination of SEM images and XRD patterns.
Journal ArticleDOI
One-source PVD of n-CuIn5Se8 photoabsorber films for hybrid solar cells
Sergei Bereznev,N. Adhikari,J. Kois,Taavi Raadik,Rainer Traksmaa,Olga Volobujeva,E. Kouhiisfahani,Andres Öpik +7 more
TL;DR: In this paper, high-sensitive CuIn5Se8 photoabsorber layers of n-type were deposited onto glass/ITO substrates by using the one-source physical vapour deposition (PVD) technique with following thermal annealing.
References
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Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
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Transport properties of polycrystalline silicon films
TL;DR: In this article, the transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model, based on the assumption of both a δ-shaped and a uniform energy distribution of interface states.
Journal ArticleDOI
ZnO/CdS/CuInSe2 thin‐film solar cells with improved performance
TL;DR: In this paper, the authors described the highest efficiency single junction thin-film cell reported to date with an active area efficiency of 14.8% with the cell structure n−ZnO/n−CdS/p−CuInSe2 deposited on a soda-lime glass substrate.
Journal ArticleDOI
Electroabsorption in Semiconductors: The Excitonic Absorption Edge
John D. Dow,David Redfield +1 more
TL;DR: In this paper, the optical absorption coefficient for direct, excitonic transitions in a uniform applied electric field is calculated and the electron-hole scattering is treated within the effective mass approximation and leads to an absorption coefficient which differs markedly in size and shape from the Franz-Keldysh absorption spectrum.
Journal ArticleDOI
Bandgap and optical transitions in thin films from reflectance measurements
TL;DR: In this paper, a new formulation and method are presented for evaluating bandgap, optical transitions and optical constants from the reflectance data for films deposited onto a non-absorbing substrate, which can be used to evaluate the optical properties of the films.