Journal ArticleDOI
Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry
O.M.J. van 't Erve,Aubrey T. Hanbicki,M. Holub,Connie H. Li,C. Awo-Affouda,Phillip E. Thompson,Berend T. Jonker +6 more
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TLDR
In this article, electrical injection, detection, and magnetic field modulation of lateral diffusive spin transport through silicon using surface contacts is presented, where Fe∕Al2O3 tunnel barrier contacts are used to create and analyze the flow of pure spin current in a silicon transport channel.Abstract:
We present the electrical injection, detection, and magnetic field modulation of lateral diffusive spin transport through silicon using surface contacts Fe∕Al2O3 tunnel barrier contacts are used to create and analyze the flow of pure spin current in a silicon transport channel Nonlocal detection techniques show that the spin current detected after transport through the silicon is sensitive to the relative orientation of the magnetization of the injecting and detecting contacts Hanle effect measurements demonstrate that the spin current can be modulated by a perpendicular magnetic field, which causes the spin to precess and dephase in the transport channelread more
Citations
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Electrical creation of spin polarization in silicon at room temperature
TL;DR: In this article, the authors demonstrate room-temperature electrical injection of spin polarization into n-type and p-type silicon from a ferromagnetic tunnel contact, spin manipulation using the Hanle effect and the electrical detection of the induced spin accumulation.
Journal ArticleDOI
Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3
TL;DR: It is shown that a charge current produces a net spin polarization via spin-momentum locking in Bi2Se3 films, and this polarization is directly manifested as a voltage on a ferromagnetic contact.
Journal ArticleDOI
Highly efficient spin transport in epitaxial graphene on SiC
Bruno Dlubak,Marie-Blandine Martin,Cyrile Deranlot,Bernard Servet,Stéphane Xavier,Richard Mattana,Mike Sprinkle,Claire Berger,Claire Berger,Walt A. de Heer,Frédéric Petroff,Abdelmadjid Anane,Pierre Seneor,Albert Fert +13 more
TL;DR: A demonstration of the ability to transmit spin currents over distances of more than one hundred micrometres with an efficiency of up to 75% in graphene grown epitaxially on silicon carbide improves the prospects of graphene-based spintronic devices.
Journal ArticleDOI
Spin dynamics in semiconductors
TL;DR: In this paper, the current status of spin dynamics in semiconductors is reviewed and a fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is comprehensively reviewed.
Journal ArticleDOI
Spin dynamics in semiconductors
TL;DR: In this paper, the current status of spin dynamics in semiconductors is reviewed, which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics.
References
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Journal ArticleDOI
Electronic analog of the electro‐optic modulator
Supriyo Datta,Biswajit Das +1 more
TL;DR: In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.
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Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor
TL;DR: In this paper, the spin-polarization effects of a current in a two-dimensional electron gas which is contacted by two ferromagnetic metals were calculated, and it was shown that for a typical device geometry, the degree of spin polarization of the current is limited to less than 0.1% only.
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Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals.
Mark Johnson,Robert H. Silsbee +1 more
TL;DR: Application of small static magnetic fields results in a Hanle effect which permits determination of the spin-relaxation time, and the unique features of the method should make it applicable to a wide range of studies.
Journal ArticleDOI
Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
TL;DR: In this article, the authors show that tunnel contacts can dramatically increase spin injection and solve the problem of the mismatch in the conductivities of a ferromagnetic (FM) metal and a semiconductor microstructure.
Journal ArticleDOI
Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
Xiaohua Lou,Christoph Adelmann,Scott A. Crooker,E. S. Garlid,Jianjie Zhang,K. S. Madhukar Reddy,Soren D. Flexner,Chris Palmstrom,Paul A. Crowell +8 more
TL;DR: In this paper, the authors demonstrate a fully electrical scheme for spin injection, transport and detection in a single device consisting of a lateral semiconducting channel with two ferromagnetic contacts, one serving as a source of spin-polarized electrons and the other as a detector.