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Journal ArticleDOI

Electrical self-calibration of nonideal bolometers.

John C. Mather
- 15 Sep 1984 - 
- Vol. 23, Iss: 18, pp 3181-3183
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TLDR
The responsivity of an infrared bolometer detector is deduced from electrical measurements, even for cases when the temperature sensor has electrical nonlinearities.
Abstract
An analytical method for determining the absorbed energy calibration of an IR bolometer from purely electrical measurements is presented. The technique is targeted at detectors with purely electrical nonlinearities. It is shown that the responsivity can be derived from the I-V plot if the limiting high-frequency impedance is measured. The electrical nonlinearity is then the difference between the impedance and the dc resistance. The model is used for designing a circuit for measuring the relative impedance parameters. The results are applicable to studies of IR sources and the detection of energy pulses with bolometers.

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Citations
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Journal ArticleDOI

Bolometers for infrared and millimeter waves

TL;DR: In this paper, a review of bolometric detectors for infrared and millimeter-wave measurements is presented, where the authors provide the background required by workers who wish to choose the appropriate bolometer technology for a given measurement or to evaluate a novel technology.
Journal Article

Bolometer noise: nonequilibrium theory

TL;DR: Basic results on bolometer responsivity, time constant, and thermal properties are presented in a new and convenient form and photon noise in the Rayleigh-Jeans limit is computed with attention to the attenuation of photon correlations in the light beam.
Journal ArticleDOI

Impedance measurements and modeling of a transition-edge-sensor calorimeter

TL;DR: In this article, the authors measured the complex impedance of a Mo/Au superconducting transition-edge-sensor (TES) calorimeter and obtained measurements of unprecedented accuracy of the heat capacity and the gradient of resistance with respect to temperature and current.
Journal ArticleDOI

Submillimeter Array Polarimetry with Hertz

TL;DR: In this paper, the authors describe the characteristics of the 350 μm polarimeter Hertz learned from laboratory tests and recent observations at the Caltech Submillimeter Observatory, which contains a pair of 32 element arrays with 18'' pixel spacing and 20'' resolution.
Journal ArticleDOI

Complex impedance measurements of calorimeters and bolometers: correction for stray impedances.

TL;DR: A method for measuring the complex impedance of bolometers and calorimeters that allows experimenters to easily isolate the device impedance from the effects of parasitic impedances and frequency dependent gains in amplifiers.
References
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Journal Article

Bolometer noise: nonequilibrium theory

TL;DR: Basic results on bolometer responsivity, time constant, and thermal properties are presented in a new and convenient form and photon noise in the Rayleigh-Jeans limit is computed with attention to the attenuation of photon correlations in the light beam.
Journal ArticleDOI

Bolometer noise: nonequilibrium theory

TL;DR: In this article, the authors derived theoretical results for noise in cryogenic bolometers and showed that Johnson noise is reduced by as much as 60% by electrothermal feedback from the bias supply.
Journal ArticleDOI

The General Theory of Bolometer Performance

TL;DR: In this article, a general phenomenological theory of the static and dynamic behavior of bolometers is presented, which assumes as given the fundamental relations between the temperature and resistance of the bolometer, and the past history of the power dissipated within it.
Journal ArticleDOI

Bolometers: ultimate sensitivity, optimization, and amplifier coupling.

TL;DR: A resonating capacitor is shown to improve the coupling to an amplifier, so that the amplifier need not limit performance even for very low temperature bolometers.
Journal ArticleDOI

Non-ohmic conductivity of barely localized electrons in three dimensions

TL;DR: In this article, the authors observed a rapid temperature variation and an electric field dependence of the d.c. conductivity in a carefully characterized sample of P doped Si, combined with measurements of Raman scattering, far-infrared absorption and magnetic susceptibility, indicate a large characteristic electronic length (10^4 times the donor Bohr radius) at a donor concentration just below the critical density of the metal-insulator transition.
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