Journal ArticleDOI
Reduction of electromigration in aluminum films by copper doping
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In this article, it was shown that the lifetime of aluminum films subjected to high current densities at elevated temperatures can be increased by the addition of copper and that the presence of copper causes an appreciable retardation in the rate at which this overall combination of processes takes place, thereby producing a considerable increase in lifetime.Abstract:
We have found that the lifetime of aluminum films subjected to high current densities at elevated temperatures can be increased by the addition of copper. Previous studies have indicated that the failure mechanism is a combination of electromigration-induced phenomena, including nucleation and growth of voids, which are gated primarily by material transport along grain boundaries. On the basis of the present study, it appears that the presence of copper causes an appreciable retardation in the rate at which this overall combination of processes takes place, thereby producing a considerable increase in lifetime.read more
Citations
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Recent advances on electromigration in very-large-scale-integration of interconnects
TL;DR: In this paper, the authors reviewed what is current with respect to electromigration in Cu in terms of resistance, capacitance delay, electromigration resistance, and cost of production, and concluded that the most serious and persistent reliability problem in interconnect metallization is electromigration.
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Electromigration in metals
Paul S. Ho,Thomas Kwok +1 more
TL;DR: In this article, an overview on the current understanding of electromigration in metals is provided. But the discussion is focused on studies in bulk metals and alloys and not on the studies in metallic thin films.
Journal ArticleDOI
An introduction to Cu electromigration
TL;DR: Basic electromigration physics is reviewed in which the main differences between Al- and Cu-based interconnects relevant to electromigration are covered and the methodology of electromigration lifetime extrapolation, including reliability assessments of more complex interconnect geometries, is covered.
Journal ArticleDOI
Electromigration in integrated circuit conductors
TL;DR: In this paper, the basic physics of failure and the concepts of electromigration and thermally induced stresses are discussed and a concept of thermodynamics in a conducting material and the response to non-direct current is presented.
References
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Journal ArticleDOI
Electromigration in Thin Al Films
I. A. Blech,E. S. Meieran +1 more
TL;DR: In this article, the process of electromigration in thin Al films was studied directly by transmission electron microscopy during passage of current, and some physical aspects of hole formation, as well as material buildup in the form of hillocks and single crystal Al whiskers, were observed.