Journal ArticleDOI
Electron-Beam-Pumped UVC Emitters Based on an (Al,Ga)N Material System
TLDR
In this article , a review of state-of-the-art UVC emitters with electron-beam pumping of heterostructures with quantum wells in an (Al,Ga)N material system is presented.Abstract:
Powerful emitters of ultraviolet C (UVC) light in the wavelength range of 230–280 nm are necessary for the development of effective and safe optical disinfection technologies, highly sensitive optical spectroscopy and non-line-of-sight optical communication. This review considers UVC emitters with electron-beam pumping of heterostructures with quantum wells in an (Al,Ga)N material system. The important advantages of these emitters are the absence of the critical problem of p-type doping and the possibility of achieving record (up to several tens of watts for peak values) output optical power values in the UVC range. The review consistently considers about a decade of world experience in the implementation of various UV emitters with various types of thermionic, field-emission, and plasma-cathode electron guns (sources) used to excite various designs of active (light-emitting) regions in heterostructures with quantum wells of AlxGa1−xN/AlyGa1−yN (x = 0–0.5, y = 0.6–1), fabricated either by metal-organic chemical vapor deposition or by plasma-activated molecular beam epitaxy. Special attention is paid to the production of heterostructures with multiple quantum wells/two-dimensional (2D) quantum disks of GaN/AlN with a monolayer’s (1 ML~0.25 nm) thickness, which ensures a high internal quantum efficiency of radiative recombination in the UVC range, low elastic stresses in heterostructures, and high-output UVC-optical powers.read more
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Journal ArticleDOI
First-principles calculations for defects and impurities: Applications to III-nitrides
TL;DR: In this paper, the authors describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors and pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels.
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Radiation damage in the TEM and SEM.
Ray F. Egerton,P Li,Marek Malac +2 more
TL;DR: In the light of recent experimental evidence, two common assumptions are re-examine: that the amount of radiation damage is proportional to the electron dose and is independent of beam diameter; and that the extent of the damage is proportionate to theamount of energy deposited in the specimen.
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The emergence and prospects of deep-ultraviolet light-emitting diode technologies
TL;DR: In this article, the authors reviewed recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices and described the key obstacles to enhancing their efficiency and how to improve their performance.
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CASINO: A new monte carlo code in C language for electron beam interaction —part I: Description of the program
TL;DR: The CASINO program as discussed by the authors is a single scattering Monte CArlo SImulation of electroN trajectory in sOlid specially designed for low-beam interaction in a bulk and thin foil.
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Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride
TL;DR: In this paper, a handheld and battery-operated far-ultraviolet plane-emission device is demonstrated, which has low current consumption and stable operation at an output power of 0.2 mW at 225 nm, and may be useful in photochemical and biotechnological applications.