Journal ArticleDOI
Electron Irradiation on p -Type Si at 77 K
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This article is published in Journal of the Physical Society of Japan.The article was published on 1971-11-05. It has received 1 citations till now. The article focuses on the topics: Electron beam processing.read more
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Journal ArticleDOI
Illumination induced annealing in electron-irradiated p-type silicon
TL;DR: In this paper, a p-type Si irradiated with 2 MeV electrons at 77 K introduces stages of recovery at around 85 and 140 K. These stages recover about 90% of carriers removed by the irradiation.
References
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Journal ArticleDOI
Inspection of periodic patterns with intensity spatial filters
TL;DR: In this paper, the application of spatial filtering to integrated circuit photomask inspection is described, and experiments were performed that used intensity filters and took advantage of the grating effect of the periodic array.