Journal ArticleDOI
Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the Superlattice
Shojiro Mori,Tsuneya Ando +1 more
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TLDR
In this article, low temperature mobilities parallel to the layers of a heavily doped n-type GaAs-Ga 1-x Al x As superlattice are calculated as a function of carrier concentrations.Abstract:
Low temperature mobilities parallel to the layers of a heavily doped n-type GaAs–Ga 1- x Al x As superlattice are calculated as a function of carrier concentrations. Assumed scattering mechanisms are Coulomb scattering from donor ions and surface roughness scattering at the interface. The subband structure in the presence of the band bending is calculated by the variational method. The surface roughness scattering is shown to be relatively unimportant and the Coulomb scattering is dominant. The mobility in the modulation doping case becomes nearly one order of magnitude larger than that in the uniform doping case in agreement with recent experiments. The band bending effect is important in the modulation doping case and reduce the mobility at large carrier concentrations. The intersubband scattering greatly reduces the mobility when electrons occupy higher subbands.read more
Citations
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Growth and optical properties of nanometer‐scale GaAs and InAs whiskers
Kenji Hiruma,Masamitsu Yazawa,Toshio Katsuyama,Kensuke Ogawa,Keiichi Haraguchi,Masanari Koguchi,Hiroshi Kakibayashi +6 more
TL;DR: In this paper, the growth process, crystal structure, and optical properties of ultrathin GaAs and InAs wires (whiskers) as thin as 15-40 nm and about 2 μm long are reviewed and discussed.
Journal ArticleDOI
Two-dimensional electron transport in semiconductor layers. I. Phonon scattering
TL;DR: In this article, the basic theory of lattice scattering for electrons in a semiconductor heterolayer, and resulting transport properties in two dimensions parallel to the layer plane, are investigated, specifically for polar semiconductors such as gallium arsenide.
Journal ArticleDOI
Electronic states in semiconductor heterostructures
Gérald Bastard,J.A. Brum +1 more
TL;DR: In this paper, the electronic energy levels of semiconductor heterostructures within the envelope function scheme were described and the Coulombic bound states in heterostructure (impurities, excitons) were discussed, and the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Journal ArticleDOI
Self-Consistent Results for a GaAs/Al x Ga 1− x As Heterojunciton. II. Low Temperature Mobility
TL;DR: In this article, the low temperature mobility of a two-dimensional system at a GaAs/Al x Ga 1-x As heterojunction was calculated in a twodimensional system.
Journal ArticleDOI
GaAs free‐standing quantum‐size wires
Kenji Hiruma,Masamitsu Yazawa,Keiichi Haraguchi,Kensuke Ogawa,Toshio Katsuyama,Masanari Koguchi,Hiroshi Kakibayashi +6 more
TL;DR: In this article, it was found that the wire growth direction is parallel to the arsenic dangling-bond direction and can be perfectly controlled by the crystallographic orientation of the GaAs substrate surface.
References
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Journal ArticleDOI
Superlattice and negative differential conductivity in semiconductors
Leo Esaki,Raphael Tsu +1 more
TL;DR: The study of superlattices and observations of quantum mechanical effects on a new physical scale may provide a valuable area of investigation in the fieId of semiconductors.
Journal ArticleDOI
Tunneling in a finite superlattice
Raphael Tsu,Leo Esaki +1 more
TL;DR: In this article, the transport properties of a finite superlattice from the tunneling point of view have been computed for the case of a limited number of spatial periods or a relatively short electron mean free path.
Journal ArticleDOI
Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
Frank Stern,W. E. Howard +1 more
TL;DR: In this article, the authors generalized the energy-level calculation to include arbitrary orientations of the constant energy ellipsoids in the bulk, the surface or interface, and an external magnetic field.
Journal ArticleDOI
Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
TL;DR: In this paper, a modulation-doping technique was used to spatially separate conduction electrons and their parent impurity atoms, thereby reducing the influence of ionized and neutral impurity scattering on the electron motion.
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Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
Frank Stern,W. E. Howard +1 more