Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: The k ⋅ p-calculations
A. A. Konakov,D. O. Filatov,D. S. Korolev,Alexey Belov,Alexey Mikhaylov,David Tetelbaum,Mahesh Kumar +6 more
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TLDR
In this article, the single-particle states of spherical GaN nanocrystals embedded in different amorphous dielectric matrices (SiO2, Al2O3, HfO2 and Si3N4) have been calculated using the isotropic approximation of the k ⋅ p -Hamiltonian.Abstract:
Using the envelope-function approximation, the single-particle states of electrons and holes in spherical GaN nanocrystals embedded in different amorphous dielectric matrices (SiO2, Al2O3, HfO2 and Si3N4) have been calculated. Ground state energies of electrons and holes in GaN nanocrystals are determined using the isotropic approximation of the k ⋅ p -Hamiltonian. All the ground state energies are found to increase with lowering the nanocrystal size and are proportional to the R−n, where R is the nanocrystal radius, n =1.5-1.9 for electrons and 1.7-2.0 for holes. The optical gap of GaN nanocrystals changes from 3.8 to 5 eV for the nanocrystal radius ranging from 3 to 1 nm.read more
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Effect of nanostructure size and dielectric environment on linear and nonlinear dielectric functions in GaN/AlxGa1-xN core shell quantum dots
TL;DR: In this article, the energy eigenvalues, linear, nonlinear and total dielectric functions for GaN/AlxGa1-xN core/shell quantum dot (CSQD) encapsulated with three different matrices (PVA, PMMA and SiO2) were computed.
References
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Generalization of the effective mass method for semiconductor structures with atomically sharp heterojunctions
É. E. Takhtamirov,V. A. Volkov +1 more
TL;DR: In this article, the Kohn-Luttinger method of envelope functions is generalized to the case of heterostructures with atomically sharp heterojunctions based on lattice-matched layers of related semiconductors with zinc-blende symmetry.
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Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE
Mahesh Kumar,Mahesh Kumar,Basanta Roul,Basanta Roul,Thirumaleshwara N. Bhat,Mohana K. Rajpalke,Pankaj Misra,Lalit M. Kukreja,Neeraj Sinha,A. T. Kalghatgi,S. B. Krupanidhi +10 more
TL;DR: In this paper, high-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitritation at high temperature, deposition of a lowtemperature buffer layer, and a high-temperature overgrowth.