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Journal ArticleDOI

Quantum confinement in Si nanocrystals

Bernard Delley, +1 more
- 15 Jan 1993 - 
- Vol. 47, Iss: 3, pp 1397-1400
TLDR
The electronic structure of nanocrystalline Si which shows visible photoluminescence is calculated using the density-functional approach for finite structures, and results for clusters suggest that the band gap scales linearly with L, where L is the cluster diameter.
Abstract
The electronic structure of nanocrystalline Si which shows visible photoluminescence is calculated using the density-functional approach for finite structures. Except for geometry this is the same theory as for first-principles band structures of semiconductors and other solids. Our results for clusters ranging up to 706 Si atoms suggest that the band gap scales linearly with ${\mathit{L}}^{\mathrm{\ensuremath{-}}1}$, where L is the cluster diameter. For such clusters it is found that dipole transitions across the gap are symmetry allowed. The finite structures thus show a direct band gap which is considerably larger than the one of bulk silicon. For larger clusters we find a strong decrease of oscillator strength, consistent with the occurrence of the indirect gap in the bulk limit.

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Porous silicon: a quantum sponge structure for silicon based optoelectronics

TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
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Fabrication of Single-Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles†

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Correlation between luminescence and structural properties of Si nanocrystals

TL;DR: In this paper, strong room-temperature photoluminescence (PL) in the wavelength range 650-950 nm has been observed in high temperature annealed (1000-1300 °C) substoichiometric silicon oxide (SiOx) thin films prepared by plasma enhanced chemical vapor deposition.
Journal ArticleDOI

Classification and control of the origin of photoluminescence from Si nanocrystals

TL;DR: It is shown, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals, and it is shown that it is possible to control the origin of the photoluminescence in a single sample.
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