Journal ArticleDOI
Quantum confinement in Si nanocrystals
Bernard Delley,E. F. Steigmeier +1 more
TLDR
The electronic structure of nanocrystalline Si which shows visible photoluminescence is calculated using the density-functional approach for finite structures, and results for clusters suggest that the band gap scales linearly with L, where L is the cluster diameter.Abstract:
The electronic structure of nanocrystalline Si which shows visible photoluminescence is calculated using the density-functional approach for finite structures. Except for geometry this is the same theory as for first-principles band structures of semiconductors and other solids. Our results for clusters ranging up to 706 Si atoms suggest that the band gap scales linearly with ${\mathit{L}}^{\mathrm{\ensuremath{-}}1}$, where L is the cluster diameter. For such clusters it is found that dipole transitions across the gap are symmetry allowed. The finite structures thus show a direct band gap which is considerably larger than the one of bulk silicon. For larger clusters we find a strong decrease of oscillator strength, consistent with the occurrence of the indirect gap in the bulk limit.read more
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Journal ArticleDOI
Porous silicon: a quantum sponge structure for silicon based optoelectronics
TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
Journal ArticleDOI
Fabrication of Single-Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles†
Kui-Qing Peng,Kui-Qing Peng,Juejun Hu,Yunjie Yan,Yin Wu,Hui Fang,Ying Xu,Shuit-Tong Lee,Jing Zhu +8 more
TL;DR: In this article, a novel strategy for preparing large-area oriented silicon nanowire arrays on silicon substrates at near room temperature by localized chemical etching is presented, which is based on metal-induced (either by Ag or Au) excessive local oxidation and dissolution of a silicon substrate in an aqueous fluoride solution.
Journal ArticleDOI
Nanostructured photoelectrodes for dye-sensitized solar cells
Qifeng Zhang,Guozhong Cao +1 more
TL;DR: In this article, the authors classify the nanostructures into (1) nanoparticles, which offer large surface area to photo-electrode film for dye-adsorption, (2) core-shell structures, which are derived from the nanoparticles however with a consideration to reduce charge recombination by forming a coating layer, (3) one-dimensional nanstructures such as nanowires and nanotubes, which provide direct pathways for electron transport much faster than in the nanoparticle films, and (4) three-dimensional nanoparticles such as Nan
Journal ArticleDOI
Correlation between luminescence and structural properties of Si nanocrystals
TL;DR: In this paper, strong room-temperature photoluminescence (PL) in the wavelength range 650-950 nm has been observed in high temperature annealed (1000-1300 °C) substoichiometric silicon oxide (SiOx) thin films prepared by plasma enhanced chemical vapor deposition.
Journal ArticleDOI
Classification and control of the origin of photoluminescence from Si nanocrystals
S. Godefroo,Manus Hayne,Manus Hayne,Mihaela Jivanescu,Andre Stesmans,Margit Zacharias,Oleg I. Lebedev,G. Van Tendeloo,Victor Moshchalkov +8 more
TL;DR: It is shown, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals, and it is shown that it is possible to control the origin of the photoluminescence in a single sample.