Journal ArticleDOI
Electropolishing Silicon in Hydrofluoric Acid Solutions
Reads0
Chats0
About:
This article is published in Journal of The Electrochemical Society.The article was published on 1958-07-01. It has received 597 citations till now. The article focuses on the topics: Electropolishing & Hydrofluoric acid.read more
Citations
More filters
Journal ArticleDOI
Fabrication and corrosion behavior of fresh porous silicon in sodium hydroxide solution
TL;DR: In this article, the corrosion behavior of fresh porous silicon (f-PS) in NaOH solution in the presence and absence of ethanol was studied by weight loss measurements and scanning electron microscope (SEM) technique.
Reference EntryDOI
Porous Silicon Particles for Imaging and Therapy of Cancer
Rita E. Serda,Ciro Chiappini,Daniel Fine,Ennio Tasciotti,Mauro Ferrari,Mauro Ferrari,Mauro Ferrari +6 more
TL;DR: The sections in this article are: Porous Silicon, Microfabrication, Characterization, Nanovectors for the Delivery of Therapeutics, and Conclusions.
Journal ArticleDOI
Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching
TL;DR: In this article, the current-voltage curve of a polished n-type silicon wafer was presented in aqueous HF using back-side illumination, and the critical current density JPS was discussed and the basic condition of etching current density for steady MSA growth was proposed.
Journal ArticleDOI
Temperature: a critical parameter affecting the optical properties of porous silicon ∗
TL;DR: In this paper, the optical properties of porous silicon (PS) samples fabricated by pulse etching in a temperature range from −40 to 50°C have been investigated using reflectance spectroscopy, photoluminescence spectrograms, and scanning electron microscopy (SEM).
Journal ArticleDOI
Correlation of electrolytic‐etch and surface‐photovoltage techniques for the detection of electrically active defects in silicon
TL;DR: In this article, a 2-μm n-type epitaxial layer on a p-type silicon wafer was mapped using a scanning surface-photovoltage technique (SSP) and then subjected to an anodic etch which preferentially attacks electrically active defects.