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Electropolishing Silicon in Hydrofluoric Acid Solutions
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This article is published in Journal of The Electrochemical Society.The article was published on 1958-07-01. It has received 597 citations till now. The article focuses on the topics: Electropolishing & Hydrofluoric acid.read more
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Method of forming substrate contact trenches and isolation trenches using anodization for isolation
TL;DR: In this paper, a method of fabricating a semiconductor structure includes providing a substrate having at least one layer formed thereon, where at least two trenches are formed through the layer and into the substrate wherein at least 1 trench is for isolation and at least 2 trenches are for making contact to the substrate.
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The Structure of Porous Silicon Revealed by Electron Microscopy
TL;DR: In this paper, a detailed electron microscope study of porous silicon compared the different structures of macro-, meso- and microporous material. And they provided strong direct evidence that visible luminescence arises from dramatic carrier confinement in quantum-size, crystalline silicon structures.
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Microscopic, self-oscillating domains at the silicon surface during its anodic dissolution in a fluoride electrolyte
TL;DR: In this article, a macroscopic model based on the picture of a heterogeneous surface, partitioned into small, independent, self-oscillating domains has been proposed, which gives a typical dimension for the domains of the order of 1000 A.
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Electroreflectance study of macroporous silicon surfaces
TL;DR: In this paper, a number of samples of macroporous silicon were characterized by electroreflectance spectroscopy and the intrinsic electric field developed due to the growth of an oxide layer on the pore walls.
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Light emission properties of porous silicon
S.M. Prokes,O.J. Glembocki +1 more
TL;DR: A review of the general properties of porous silicon that have been reported thus far, along with a discussion of the possible mechanisms for the luminescence process is given in this article, along with the support for and drawbacks of each particular model.