Journal ArticleDOI
Essential physics of carrier transport in nanoscale MOSFETs
Mark Lundstrom,Zhibin Ren +1 more
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TLDR
In this paper, the physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall MOSFETs are examined. And the results show that the essential physics of nanoscale MOSFLETs can be understood in terms of a conceptually simple scattering model.Abstract:
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model.read more
Citations
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Journal ArticleDOI
Energy dissipation and transport in nanoscale devices
TL;DR: In this article, the authors present recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures, including silicon transistors, carbon nanostructures, and semiconductor nanowires.
Journal ArticleDOI
Energy Dissipation and Transport in Nanoscale Devices
TL;DR: In this article, the authors present recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures, including silicon transistors, carbon nanostructures, and semiconductor nanowires.
Journal ArticleDOI
Theory of ballistic nanotransistors
TL;DR: In this paper, numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors, and the model reduces to Natori's theory of the ballistic MOSFET.
Journal ArticleDOI
Heat Generation and Transport in Nanometer-Scale Transistors
TL;DR: Trends in transistor geometries and materials, from bulk silicon to carbon nanotubes, along with their implications for the thermal design of electronic systems are surveyed.
Book
Nanoscale Transistors: Device Physics, Modeling and Simulation
Mark Lundstrom,Jing Guo +1 more
TL;DR: In this paper, the Ballistic Nanotransistor and the Scattering Theory of the MOSFET have been discussed, as well as field effect transistors at the molecular scale.
References
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Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Electronic Transport in Mesoscopic Systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Book
Fundamentals of carrier transport
TL;DR: The fundamental principles of carrier transport in semiconductors and semiconductor devices are discussed in this article, which is an accessible introduction to the behavior of charged carriers in semiconductor and semiconductor devices.
Journal ArticleDOI
Nanoscale device modeling: the Green’s function method
TL;DR: The non-equilibrium Green's function (NEGF) formalism provides a sound conceptual basis for the devlopment of atomic-level quantum mechanical simulators that will be needed for nanoscale devices of the future as discussed by the authors.
Journal ArticleDOI
Ballistic metal-oxide-semiconductor field effect transistor
TL;DR: In this article, the authors proposed the ballistic transport of carriers in MOSFETs, and presented the currentvoltage characteristics of the ballistic n-channel MOS-FET.