Journal ArticleDOI
Theory of ballistic nanotransistors
TLDR
In this paper, numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors, and the model reduces to Natori's theory of the ballistic MOSFET.Abstract:
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to Natori's theory of the ballistic MOSFET. The model also treats 2-D electrostatics and the quantum capacitance limit where the semiconductor quantum capacitance is much less than the insulator capacitance. This new model provides insights into the performance of MOSFETs near the scaling limit and a unified framework for assessing and comparing a variety of novel transistors.read more
Citations
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Journal ArticleDOI
Ballistic carbon nanotube field-effect transistors
TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
TL;DR: In this article, the performance limits of monolayer transition metal dichalcogenide ( MX2) transistors with a ballistic MOSFET model were examined with an ab initio theory.
Journal ArticleDOI
CNTFET-Based Design of Ternary Logic Gates and Arithmetic Circuits
TL;DR: A novel design technique for ternary logic gates based onCNTFETs is proposed and compared with the existing resistive-load CNTFET logic gate designs, which provides an excellent speed and power consumption characteristics in datapath circuit such as full adder and multiplier.
Journal ArticleDOI
Nanowire Transistor Performance Limits and Applications
TL;DR: In this paper, the authors review advances in chemically synthesized semiconductor nanowires as nanoelectronic devices and discuss 3-D heterogeneous integration that is uniquely enabled by multifunctional nanowire within a bottom-up approach.
References
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Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Book
Physical properties of carbon nanotubes
TL;DR: In this paper, an introductory textbook for graduate students and researchers from various fields of science who wish to learn about carbon nanotubes is presented, focusing on the basic principles behind the physical properties and giving the background necessary to understand the recent developments.
Electronic Transport in Mesoscopic Systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Journal ArticleDOI
Carbon nanotubes as schottky barrier transistors.
TL;DR: In this paper, the authors show that carbon nanotube transistors operate as unconventional Schottky barrier transistors, in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance.
Journal ArticleDOI
Single-walled carbon nanotube electronics
TL;DR: In this paper, the fabrication and electronic properties of devices based on individual carbon nanotubes are reviewed, and both metallic and semiconducting SWNTs are found to possess electrical characteristics that compare favorably to the best electronic materials available.
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A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region
Jie Deng,Hon-Sum Philip Wong +1 more