Journal ArticleDOI
Exciton Binding Energy in Small-Period GaAs/Ga(1-x)AlxAs Superlattices
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In this paper, the optical determination of exciton binding energies in small-period GaAs/Ga0.7Al0.3As superlattices was performed by means of low-temperature photoluminescence excitation spectroscopy.Abstract:
We report the optical determination of exciton binding energies in small-period GaAs/Ga0.7Al0.3As superlattices by means of low-temperature photoluminescence excitation spectroscopy and photoluminescence spectroscopy as a function of temperature. The heavy-hole exciton binding energy decreases with decreasing superlattice period. Our experimental findings are in reasonable agreement with a variational calculation.read more
Citations
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Journal ArticleDOI
Electronic states in semiconductor heterostructures
Gérald Bastard,J.A. Brum +1 more
TL;DR: In this paper, the electronic energy levels of semiconductor heterostructures within the envelope function scheme were described and the Coulombic bound states in heterostructure (impurities, excitons) were discussed, and the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Book ChapterDOI
Electronic States in Semiconductor Heterostructures
Journal ArticleDOI
Blue shift of the absorption edge in AlGaInAs‐GaInAs superlattices: Proposal for an original electro‐optical modulator
TL;DR: In this paper, the effect of the external electric field of the resonant tunneling coupling between adjacent wells in a thin layer superlattice was investigated and shown to have a blue shift of the effective absorption edge.
Journal ArticleDOI
Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires
TL;DR: In this article, a fractional-dimensional approach of excitonic characteristics in semiconductorquantum wells and quantum well wires with cylindrical or rectangular cross sections is proposed, which allows a rather simple and quick determination of eigenenergies of confined excitons, whatever the quantum numbers of the conduction and valence subbands, and whatever the shape of the confining medium.
References
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Journal ArticleDOI
Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
David A. B. Miller,Daniel S. Chemla,D. J. Eilenberger,Peter W. Smith,A. C. Gossard,W. T. Tsang +5 more
TL;DR: The first measurements of optical absorption saturation in GaAs/GaAlAs multiple quantum well (MQW) structures at room temperature near the heavy hole exciton peak were reported in this article.
Journal ArticleDOI
Magneto-optical determination of exciton binding energy in GaAs- Ga 1 − x Al x As quantum wells
TL;DR: In this article, the binding energy of the exciton in GaAs quantum wells confined within Ga-Al-As is determined by the observation of the different behavior of the ground state and the excited states of excitonic transitions of different subbands with excitation spectroscopy in magnetic fields.
Journal ArticleDOI
Unambiguous observation of the 2s state of the light- and heavy-hole excitons in GaAs-(AlGa)As multiple-quantum-well structures.
TL;DR: In this article, the binding energy of the ground state of the excitons in GaAs was determined and combined with the heavy-hole exciton binding energy to give an accurate determination of ground state binding energy.
Journal ArticleDOI
Size quantization and band-offset determination in GaAs-GaAlAs separate confinement heterostructures
TL;DR: In this paper, the photoluminescence excitation spectroscopy of GaAs was investigated in a separate confinement heterostructures consisting of a narrow GaAs quantum well embedded in a larger one.
Journal ArticleDOI
Vertical transport in GaAs/Ga1-xAlxAs superlattices observed by photoluminescence
TL;DR: In this article, photoexcited carriers from the superlattice to the enlarged well localized levels were transferred by ionized impurity scattering and well size fluctuation, and the transfer efficiency was characterized by the relative intensities of luminescence peaks.