Open AccessJournal Article
Experimental and theoretical investigations of singularities of the thresholdand power characteristics of InGaAsP/InP separate-confinement double-heterostructure lasers (λ = 1.3 μm)
D. Z. Garbuzov,A. V. Ovchinnikov,N. A. Pikhtin,Z. N. Sokolova,I. S. Tarasov,V. B. Khalfin,A. Tybulewicz +6 more
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This article is published in Soviet physics. Semiconductors.The article was published on 1991-01-01 and is currently open access. It has received 14 citations till now. The article focuses on the topics: Double heterostructure.read more
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Effect of internal optical loss on threshold characteristics of semiconductor lasers with a quantum-confined active region
Levon V. Asryan,Serge Luryi +1 more
TL;DR: In this paper, a general approach to including the internal optical loss in the description of semiconductor lasers with a quantum-confined active region was developed, assuming that the internal absorption loss coefficient is linear in the free-carrier density in the optical confinement layer and characterized by two parameters, the constant component and the net cross section for all absorption loss processes.
Journal ArticleDOI
Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers
TL;DR: In this article, the effect of the transverse laser structure on two-photon absorption (TPA) related effects in high-power diode lasers is analyzed theoretically, and it is shown that the indirect effect of TPA, via carrier generation in the waveguide and free-carrier absorption, is strongly dependent on the active layer position.
Journal ArticleDOI
Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures
TL;DR: In this article, the acceptor doping levels in the p cladding layer immediately adjacent the active region of InGaAsP/InP laser heterostructures were measured by a purely electrical method.
Journal ArticleDOI
Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes
TL;DR: In this paper, the effects of free-carrier absorption produced by non-equilibrium electrons and holes injected in the waveguide on characteristics of high-power AlGaAs-based laser diodes emitting light at 808 nm were examined theoretically, using the driftdiffusion numerical approach.
Journal ArticleDOI
Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes
TL;DR: In this paper, the authors analyzed temperature dependent efficiency and modulation characteristics of strained quantum-well (QW) InGaAs-inGaAsP-InGaP 980-nm laser diodes using self consistent carrier transport analysis including stimulated emission.
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Effect of internal optical loss on threshold characteristics of semiconductor lasers with a quantum-confined active region
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