Journal ArticleDOI
Extensive Analysis of Gate Leakage Current in Nano-Scale Multi-gate MOSFETs
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This article is published in Transactions on Electrical and Electronic Materials.The article was published on 2022-06-13. It has received 3 citations till now. The article focuses on the topics: Leakage (economics) & MOSFET.read more
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Journal ArticleDOI
Physics-Based Modeling and Validation of 2-D Schottky Barrier Field-Effect Transistors
TL;DR: In this paper , the authors describe the charge transport in 2D Schottky barrier field effect transistors (SB-FETs) based on the carrier injection at the SBS contacts.
Journal ArticleDOI
Analytical modelling, simulation, and characterization of temperature-dependent GaN-HK-SBNWFET for high-frequency application
TL;DR: In this article , an analytical model has been projected to examine the effect of temperature on the Gallium Nitride (GaN) based High-K Schottky Barrier Nano Wire Field Effect Transistor (SBNWFET) for its high-frequency application.
Physics-Based Modeling and Validation of 2-D Schottky Barrier Field-Effect Transistors
TL;DR: In this article , the authors describe the charge transport in 2-D Schottky barrier field effect transistors (SB-FETs) based on the carrier injection at the SBS contacts.
References
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Book
CRC Handbook of Chemistry and Physics
TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
Book
FinFETs and Other Multi-Gate Transistors
TL;DR: FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FET) and explains the physics and properties.
Journal ArticleDOI
High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling
Wen-Chin Lee,Chenming Hu +1 more
TL;DR: In this paper, a semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1-3.6 nm) as a multiplier to a simple analytical model, a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N/sup +/, P/sup+/, Si, SiGe) and tunneling processes.
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