Journal ArticleDOI
Fast silicon-on-silicon optoelectronic router based on a BMFET device
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TLDR
In this article, a three-terminal electronic device injects and controls the free carrier plasma inside the active region of a single-mode input waveguide, a two-mode active section where the light steering by means of mode mixing between the fundamental and the first higher order modes is achieved.Abstract:
In this paper, a new configuration for an optoelectronic router is presented. The device is composed by a single-mode input waveguide, a two-mode active section where the light steering by means of mode mixing between the fundamental and the first higher order mode is achieved. A terminal Y-branch is placed to separate the output channels. Active modulation is achieved by means of a three-terminal electronic device, which injects and controls the free carrier plasma inside the active region. The usage of a three-terminal device allows extremely fast dynamic response. Switching times of few nanoseconds are obtained together with an average crosstalk of -11 dB.read more
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Journal ArticleDOI
Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices
TL;DR: In this article, an electrically modulated silicon-on-insulator (SOI) submicrometer-size high-index-contrast waveguide was proposed and analyzed.
Patent
Optical ready substrates
TL;DR: An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconducting layer, and an optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit was described in this article.
Patent
Electro-optic modulation
TL;DR: In this article, a silicon electro-optic waveguide modulator is formed using a metal-oxide-semiconductor (MOS) configuration using different modes of operation of the MOS diode and gate oxide thicknesses.
Patent
Optical-ready wafers
TL;DR: An optical ready substrate as mentioned in this paper is a substrate made at least in part of a first semiconductor material and having a front side and a backside, the front side having a top surface that is of sufficient quality to permit microelectronic circuitry to be fabricated thereon using semiconductor fabrication processing techniques.
Journal ArticleDOI
Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration
TL;DR: In this paper, the electrical and optical properties of a silicon electro-optic waveguide modulator using a metal-oxide-semiconductor (MOS) configuration were analyzed.
References
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Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).
Journal ArticleDOI
The single-mode condition for semiconductor rib waveguides with large cross section
TL;DR: In this article, a comparison of the single-mode condition for semiconductor rib waveguides with large cross section obtained by the effective index method and the corrected formula proposed by Soref et al. with experimental data is carried out.
Journal ArticleDOI
Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI waveguide
TL;DR: In this paper, a novel silicon optical amplitude-phase modulator integrated into a SOI (silicon on insulator) optical waveguide and based on a three terminal electronic structure was analyzed.
Journal ArticleDOI
Integrated optic adiabatic devices on silicon
TL;DR: A study of integrated optic devices based on adiabatic principles is reported in this article, which includes a 3-dB coupler, a full coupler and an asymmetric Y-coupler for a 13-155- mu m-wavelength multiplexer.
Journal ArticleDOI
Silicon 1*2 digital optical switch using plasma dispersion
TL;DR: In this paper, the first silicon 1×2 digital optical waveguide switch with free-carrier plasma dispersion and waveguide vanishing effect was demonstrated at a wavelength of 1.3µm.