Journal ArticleDOI
Fermi energy and Fermi-Dirac integrals for zincblende-symmetry narrow-gap semiconductors with spherical energy bands
TLDR
In this article, the Fermi-Dirac integral for narrow-gap semiconductors with spherical energy bands is derived and the role of this integral towards the convergence of the expansion of the screening charge density for impurity ions is described.Abstract:
Based on an analytical approximation (recently proposed by Joyce and Dixon) for the Fermi energy of an ideal Fermi gas, an expression for the Fermi energy of zincblende-symmetry narrow-gap semiconductors with spherical energy bands is derived. A formula for the Fermi-Dirac integral for such semiconductors is given and certain properties of the integral are discussed. As an additional study, the role of this Fermi-Dirac integral towards the convergence of the expansion of the screening charge density for impurity ions in semiconductors is described.read more
Citations
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Analytic approximations for degenerate accumulation layers in semiconductors, with applications to barrier lowering in isotype heterojunctions
TL;DR: In this paper, the Joyce-Dixon approximation for the Fermi energy in a degenerate semiconductor is used to obtain rapidly converging series expansions for both the potential and the electric field for degenerate accumulation layers in semiconductors, as functions of the electron concentration.
Journal ArticleDOI
Simple approximation for Fermi energy in nonparabolic semiconductors
V. Altschul,E. Finkman +1 more
TL;DR: In this paper, a simple approximation relating the Fermi energy to carrier concentration in both parabolic and non-parabolic semiconductors was proposed in the form of a polynomial correction to Boltzmann's approximation of semiconductor statistics.
Journal ArticleDOI
Theoretical analysis of the Einstein relation in ultrathin films of degenerate ternary chalcopyrite semiconductors
K.P. Ghatak,M. Mondal +1 more
TL;DR: In this paper, the diffusivity-to-mobility ratio of ultrathin films of degenerate ternary chalcopyrite semiconductors in the presence of size quantization was derived.
Journal ArticleDOI
Theory of saturation photocurrent and photovoltage in p‐n junction solar cells
S. Noor Mohammad,S. T. H. Abidi +1 more
TL;DR: In this paper, a theory of saturation photocurrent and photovoltage has been developed for p-njunctionsolar cells, based on ambipolar transportequations for electrons and holes near the junction, and on empirical models for band gap narrowing and Fermi-Dirac integrals.
Journal ArticleDOI
Simple theoretical analysis of the thermoelectric power in quantum dot superlattices of non-parabolic heavily doped semiconductors with graded interfaces under strong magnetic field
TL;DR: In this paper, the thermoelectric power in the presence of a large magnetic field (TPM) in heavily doped III-V, II-VI, PbTe/PbSnTe, strained layer and HgTe/CdTe quantum dot superlattices (QDSLs) with graded structures was analyzed.
References
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XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors
TL;DR: In this article, the problem of determining the time of relaxation due to scattering of electrons and holes by charged impurity donors and acceptors in semiconductors is reconsidered in an effort to derive formulae more exact and general than those due to Conwell, Weisskopf, and other authors.
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Analytic approximations for the Fermi energy of an ideal Fermi gas
W. B. Joyce,R. W. Dixon +1 more
TL;DR: In this paper, the Fermi Dirac integral is extended to cover the energy range of semiconductor lasers by the expression η=lnF+2−3/2F and by other simple differentiable approximations applicable to higher degeneracy (η≲7) or to nonparabolic bands (f≠x1/2).
Journal ArticleDOI
The Electrical Resistance of Dilute Solid Solutions
TL;DR: In this article, it was shown that the electrical resistivity of any metal can be expressed in terms of the time of relaxation and the number of free electrons per unit volume of the metal.