scispace - formally typeset
Journal ArticleDOI

Fifth-order state-space modeling of class E amplifiers with finite-series inductance and an anti-parallel diode at the switch

TLDR
In this paper, a state-space model is developed to enable a general analysis of the class E amplifier with a power-MOSFET switch under non-optimal and optimal conditions.
Abstract
A state-space model is developed to enable a general analysis of the class E amplifier with a power-MOSFET switch under nonoptimal and optimal conditions. That is, it permits analysis of nonzero voltage switching and nonzero current switching operation, as well as the optimal zero voltage switching (ZVS) and zero current switching (ZCS) condition. This is achieved by improving the representation of the power MOSFET switch by the inclusion of a series inductance, a model for the on-state resistance and switching time, and a model for the anti-parallel body diode. An optimal 100-kHz class E amplifier was designed and constructed, using the model to choose component values. Experimental results show good agreement with the predictions of the state-space model for both optimal and nonoptimal operating conditions.

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Citations
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Journal ArticleDOI

Steady-State Simulation and Optimization of Class-E Power Amplifiers With Extended Impedance Method

TL;DR: A new iteration-free steady-state analysis to the Class-E power amplifier (PA) in frequency-domain is proposed by extending the scope of electrical impedance by expressing the impedances of different circuit components in the classes, including the active switches, in matrix form.
Proceedings ArticleDOI

Design of class-E power amplifier with nonlinear components by using extended impedance method

TL;DR: It is proved that the EIM based optimization of the class-E power amplifier circuit can be efficiently simulated and optimized in the frequency domain much faster than the state-of-the-art numericalclass-E PA optimization.
Proceedings ArticleDOI

Study of parasitic and stray components induced ringings in class E power amplifiers in MHz range

TL;DR: A circuit model of the amplifier with parasitic or stray components is developed to explain the phenomenon and its underlying cause, which causes the circuit to deviate from the desired class E operation.
Proceedings ArticleDOI

Photoswitch-Controlled Class E RF Power Amplifier

TL;DR: In this article, a photo-switched Class E amplifier was proposed, which uses a photoswitch as active device instead of a transistor and achieves the best simulated efficiency of 62.5%.
References
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Journal ArticleDOI

Class E-A new class of high-efficiency tuned single-ended switching power amplifiers

TL;DR: In this article, a load network is synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the a.c. cycle.

Class-e - new class of high-efficiency tuned single-ended switching power amplifiers

No Sokal, +1 more
TL;DR: Advantages of Class E are unusually high efficiency, a priori designability, large reduction in second-breakdown stress, low sensitivity to active-device characteristics, and potential for high-efficiency operation at higher frequencies than previously published Class-D circuits.
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