Journal ArticleDOI
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
TLDR
In this article , a multilayer resistive switching (RS) and neuromorphic characteristics emerges as a promising paradigm to build power-efficient computing hardware for high density data storage memory and artificial intelligence.About:
This article is published in Journal of Alloys and Compounds.The article was published on 2022-02-01. It has received 32 citations till now. The article focuses on the topics: Neuromorphic engineering & Memristor.read more
Citations
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Journal ArticleDOI
Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering
TL;DR: In this paper , a low-k dielectric barrier layer is inserted between the HfO2 switching layer and high oxygen affinity tantalum oxy-nitride electrode to alleviate the variability and enhance the ON/OFF ratio of two-terminal resistive switching (RS) memories.
Journal ArticleDOI
Emerging MXene‐Based Memristors for In‐Memory, Neuromorphic Computing, and Logic Operation
TL;DR: In this article , a review of the emerging 2D MXene materials-based memristors is presented, where the challenges, development trends, and perspectives are discussed, aiming to provide guidelines for the preparation of novel MXene-based MEMs and more engaging information technology applications.
Journal ArticleDOI
Electronic Synaptic Plasticity and Analog Switching Characteristics in Pt/Tiox/Alox/Altaon/Tan Multilayer Rram for Artificial Synapses
Journal ArticleDOI
Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
TL;DR: In this article , a multilayer structure-based resistive random access memory (RRAM) device was examined for electronic synaptic plasticity and analog bipolar switching behavior by using high-resolution transmission electron microscopy (HRTEM).
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Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
TL;DR: In this paper , a high band gap, low Gibbs free energy Al2O3 interlayer between the HfO2 switching layer and the tantalum oxy-nitride electrode (TaN) bottom electrode was designed to operate as an oxygen reservoir, increasing the resistance ratio between HRS and LRS and enabling multilayer data storage.
References
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Competitive Hebbian learning through spike-timing-dependent synaptic plasticity
TL;DR: In modeling studies, it is found that this form of synaptic modification can automatically balance synaptic strengths to make postsynaptic firing irregular but more sensitive to presynaptic spike timing.
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Spike timing-dependent plasticity: a Hebbian learning rule
Natalia Caporale,Yang Dan +1 more
TL;DR: This work has examined the functional consequences of STDP directly in an increasing number of neural circuits in vivo, and revealed several layers of complexity in STDP, including its dependence on dendritic location, the nonlinear integration of synaptic modification induced by complex spike trains, and the modulation ofSTDP by inhibitory and neuromodulatory inputs.
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Synaptic Modification by Correlated Activity: Hebb's Postulate Revisited
Guo-Qiang Bi,Mu-ming Poo +1 more
TL;DR: Spike timing-dependent modifications, together with selective spread of synaptic changes, provide a set of cellular mechanisms that are likely to be important for the development and functioning of neural networks.
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Spike Timing-Dependent Plasticity of Neural Circuits
Yang Dan,Mu-ming Poo +1 more
TL;DR: Experimental characterization of spike timing-dependent plasticity at various synapses, the underlying cellular mechanisms, and the associated changes in neuronal excitability and dendritic integration are summarized.
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A fully integrated reprogrammable memristor–CMOS system for efficient multiply–accumulate operations
Fuxi Cai,Justin M. Correll,Seung Hwan Lee,Yong Lim,Yong Lim,Vishishtha Bothra,Zhengya Zhang,Michael P. Flynn,Wei Lu +8 more
TL;DR: A programmable neuromorphic computing chip based on passive memristor crossbar arrays integrated with analogue and digital components and an on-chip processor enables the implementation of neuromorphic and machine learning algorithms.