scispace - formally typeset
Journal ArticleDOI

Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

Jia-xin Shao
- 01 Feb 2022 - 
- Vol. 892, pp 162141-162141
TLDR
In this article , a multilayer resistive switching (RS) and neuromorphic characteristics emerges as a promising paradigm to build power-efficient computing hardware for high density data storage memory and artificial intelligence.
About
This article is published in Journal of Alloys and Compounds.The article was published on 2022-02-01. It has received 32 citations till now. The article focuses on the topics: Neuromorphic engineering & Memristor.

read more

Content maybe subject to copyright    Report

Citations
More filters
Journal ArticleDOI

Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering

TL;DR: In this paper , a low-k dielectric barrier layer is inserted between the HfO2 switching layer and high oxygen affinity tantalum oxy-nitride electrode to alleviate the variability and enhance the ON/OFF ratio of two-terminal resistive switching (RS) memories.
Journal ArticleDOI

Emerging MXene‐Based Memristors for In‐Memory, Neuromorphic Computing, and Logic Operation

TL;DR: In this article , a review of the emerging 2D MXene materials-based memristors is presented, where the challenges, development trends, and perspectives are discussed, aiming to provide guidelines for the preparation of novel MXene-based MEMs and more engaging information technology applications.
Journal ArticleDOI

Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses

TL;DR: In this article , a multilayer structure-based resistive random access memory (RRAM) device was examined for electronic synaptic plasticity and analog bipolar switching behavior by using high-resolution transmission electron microscopy (HRTEM).
Journal ArticleDOI

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

TL;DR: In this paper , a high band gap, low Gibbs free energy Al2O3 interlayer between the HfO2 switching layer and the tantalum oxy-nitride electrode (TaN) bottom electrode was designed to operate as an oxygen reservoir, increasing the resistance ratio between HRS and LRS and enabling multilayer data storage.
References
More filters
Journal ArticleDOI

Competitive Hebbian learning through spike-timing-dependent synaptic plasticity

TL;DR: In modeling studies, it is found that this form of synaptic modification can automatically balance synaptic strengths to make postsynaptic firing irregular but more sensitive to presynaptic spike timing.
Journal ArticleDOI

Spike timing-dependent plasticity: a Hebbian learning rule

TL;DR: This work has examined the functional consequences of STDP directly in an increasing number of neural circuits in vivo, and revealed several layers of complexity in STDP, including its dependence on dendritic location, the nonlinear integration of synaptic modification induced by complex spike trains, and the modulation ofSTDP by inhibitory and neuromodulatory inputs.
Journal ArticleDOI

Synaptic Modification by Correlated Activity: Hebb's Postulate Revisited

TL;DR: Spike timing-dependent modifications, together with selective spread of synaptic changes, provide a set of cellular mechanisms that are likely to be important for the development and functioning of neural networks.
Journal ArticleDOI

Spike Timing-Dependent Plasticity of Neural Circuits

TL;DR: Experimental characterization of spike timing-dependent plasticity at various synapses, the underlying cellular mechanisms, and the associated changes in neuronal excitability and dendritic integration are summarized.
Journal ArticleDOI

A fully integrated reprogrammable memristor–CMOS system for efficient multiply–accumulate operations

TL;DR: A programmable neuromorphic computing chip based on passive memristor crossbar arrays integrated with analogue and digital components and an on-chip processor enables the implementation of neuromorphic and machine learning algorithms.
Related Papers (5)