Proceedings ArticleDOI
Gate recess structure engineering in MESFETs to achieve higher schottky breakdown voltage for switch MMIC applications
K. Mahadeva Bhat,G. Sai Saravanan,H. P. Vyas,Mahaveer K. Jain,Aryasomayajula Subrahmanyam,R. Muralidharan +5 more
- pp 1-4
TLDR
In this paper, a method of generating wide gate recess structure in single recess step by the help of a bi-layer lithography technique, which can be used to generate varying gate recess width by varying developmental time.Abstract:
In this paper we report for the first time, a method of generating wide gate recess structure in single recess step by the help of a bi-layer lithography technique, which can be used to generate varying gate recess width by varying developmental time. It is established that the gate recess structure decides the schottky breakdown voltages in these devices. The distance from gate edge-to-n+ in the recess structure becomes very critical for high Vb. Commonly, double recessing is used to achieve this, which is more complicated. We have achieved Vb as high as 20Volts using single recess.read more
Citations
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Journal ArticleDOI
A high‐isolation switch based on a standard GaAs process
TL;DR: In this article, the design and evaluation of an ultra-wideband nonreflective single port single throw switch integrated circuit is described, which has a measured insertion loss of <1.2 dB and isolation of typically better than 70 dB from DC to 10 GHz.
References
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An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications
TL;DR: In this paper, a model based on surface states was proposed to explain this phenomenon, which then led to the use of charge-screen layers and a double-recessed gate process to suppress surface effects.
Journal ArticleDOI
Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structure
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Journal ArticleDOI
Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures
TL;DR: In this paper, the surface potential effect in GaAs MESFETs caused a depleted zone to form not only between the source and gate, but also between the gate and drain.
Journal ArticleDOI
Gate-drain avalanche breakdown in GaAs power MESFET's
Abstract: The voltage breakdown behavior of a number of different MESFET structures has been investigated using a two-dimensional numerical model. The site of the avalanche is found to be under the drain edge of the gate in recessed devices under all bias conditions, but moves towards the drain contact in planar structures when the channel is not pinched off. The dependence of the breakdown voltage on a variety of geometrical and physical variables has been studied. In particular the surface is shown to play an important part in determining the breakdown voltage.
Journal ArticleDOI
Breakdown analysis of an asymmetrical double recessed power MESFET's
TL;DR: In this paper, a double recessed MESFET with a very good and instructive breakdown performance was analyzed and it was shown that the double recess structure allows a large breakdown improvement both at pinch off voltage and at open channel.