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Grain boundary recombination: Theory and experiment in silicon
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TLDR
In this article, a detailed balance approach has been coupled with a solution of the current continuity equation to yield a full solution to the problem subject to the approximation that majority carrier currents can be properly described by thermionic emission expressions.Abstract:
Calculations have been made of the barrier heights and recombination velocities at semiconductor grain boundaries subject to uniform illumination with above‐band‐gap light. A detailed balance approach has been coupled with a solution of the current continuity equation to yield a full solution of the problem subject to the approximation that majority carrier currents can be properly described by thermionic emission expressions. Silicon bicrystal data are presented and shown to be in good agreement with the predictions of the theory.read more
Citations
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Mechanisms behind green photoluminescence in ZnO phosphor powders
Karel Vanheusden,William L. Warren,Carleton H. Seager,David R. Tallant,J. A. Voigt,Bruce E. Gnade +5 more
TL;DR: In this article, the authors explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen vacancy density in commercial ZnO phosphors by combining photoluminescence, optical absorption, and electron paramagnetic resonance spectroscopies.
Journal ArticleDOI
Grain boundaries in semiconductors
TL;DR: In this article, a review of the available experimental and theoretical understanding on the structure and electronic properties of grain boundaries in semiconducting materials is presented, where high-resolution electron microscope images of interfaces are interpreted within the framework of the structural unit model of grain boundary, and the electronic properties are discussed with relation to the popular symmetric Schottky barrier model for charge trapping and potential barrier formation.
Journal ArticleDOI
Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells
TL;DR: In this paper, a theoretical analysis of the induced current profiles at grain boundaries in polycrystalline solar cells, as obtained by light or electron beam excitation, is given.
Journal ArticleDOI
Ohmic contacts and doping of CdTe
TL;DR: In this article, the current art and science of contacting p-CdTe and its relation to doping the material are reviewed and a review of the current state of the art can be found.
Journal ArticleDOI
Texture and electronic activity of grain boundaries in Cu(In,Ga)Se2 thin films
TL;DR: In this article, the influence of different film textures on the electronic properties of polycrystalline Cu(In,Ga)Se2 absorbers is studied by measuring the laterally resolved optoelectronic properties of differently textured films with Kelvin probe force microscopy and cathodoluminescence.
References
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Journal ArticleDOI
Statistics of the Recombinations of Holes and Electrons
William Shockley,W. T. Read +1 more
TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Journal ArticleDOI
Theory of conduction in ZnO varistors
TL;DR: In this article, a theory was presented which quantitatively accounts for the important features of conduction in ZnO-based metaloxide varistors, which predicts a varistor breakdown voltage of 3.2 V/grain boundary for n0=1017 carriers' cm−3 and T=300 K.
Journal ArticleDOI
The dc voltage dependence of semiconductor grain‐boundary resistance
G. E. Pike,C. H. Seager +1 more
TL;DR: In this article, a model is developed to describe the potential barriers which often occur at grain boundaries in polycrystalline semiconductors, where the resistance of such materials is determined by thermionic emission over these barriers.
Journal ArticleDOI
Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
H.C. Card,E.S. Yang +1 more
TL;DR: The dependence of minority carrier lifetime (τ) on the doping concentration N d, grain size d and interface state density N is at the grain boundaries in polycrystalline semiconductors has been calculated analytically as discussed by the authors.
Journal ArticleDOI
Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon
C. H. Seager,T. G. Castner +1 more
TL;DR: In this article, the electrical transport properties of polycrystalline silicon have been characterized as a function of temperature on both bulk specimens and individual grain boundaries in this material and potential probe measurements show that a large spread in grain-boundary impedances exist in these higher-doped specimens.
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Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
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