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Journal ArticleDOI

Grain boundary resistivity of aluminium

M. B. Kasen
- 01 Mar 1970 - 
- Vol. 21, Iss: 171, pp 599-610
TLDR
In this article, the residual resistivity at 4 K has been studied as a function of grain boundary area per unit volume in aluminium of two differing purities, and a positive correlation between residual resistivities and boundary area was observed above a minimum boundary area.
Abstract
Residual resistivity at 4 K has been studied as a function of grain boundary area per unit volume in aluminium of two differing purities. A positive correlation between residual resistivity and boundary area was observed above a minimum boundary area per unit volume. The resistivity attributable to the presence of grain boundaries was found to reflect both the defect structure of the boundaries and the solute redistribution due to boundary segregation. Elimination of the solute effect yielded a specific boundary resistivity of 1·35±0·5 × 10−12 ohm-cm2 for pure boundaries. Evidence of a purification effect due to grain boundary segregation was noted.

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Citations
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Journal ArticleDOI

Aluminum—1. A review of resistive mechanisms in aluminum

TL;DR: In this article, the effect of phonons, electron-electron interactions, boundaries, vacancies and interstitials, chemical impurities, dislocations, and stacking faults on the electrical resistivity of aluminum at room temperature and below are reviewed.
Journal ArticleDOI

Grain boundary migration

TL;DR: This paper reviewed recent contributions to the field of grain boundary migration and discussed the latest theoretical work on grain boundary structure and its relation to boundary migration, and a film illustrating boundary migration in fcc organic compounds was also shown.
Journal ArticleDOI

Effect of solute and orientation on the mobility of near-coincidence tilt boundaries in high-purity aluminum

TL;DR: In this paper, two distinct regimes of grain boundary motion were observed, characterized by differences in activation energy and temperature range over which they occurred, and it was proposed that the change from one mode of grain boundaries behavior to the other indicates that a transformation in grain boundary structure occurs.
Journal ArticleDOI

A dislocation model of grain boundary electrical resistivity

TL;DR: Grain boundary electrical resistivities are calculated on the assumption that the scattering is due primarily to the dislocations which constitute these boundaries, and the calculated grain boundary resistivities were in satisfactory agreement with experimental data for thirteen of the fourteen metals from seven subgroups of the periodic table, for which data are available as mentioned in this paper.
Journal ArticleDOI

Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

TL;DR: In this article, high-temperature electrical stability of silver (Ag) metal nanoparticle (NP) films fabricated using an Aerosol Jet-based printing technique is investigated.
References
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Journal ArticleDOI

Grain boundaries in metals

D. McLean, +1 more
- 01 Jul 1958 - 
Journal ArticleDOI

The effect of grain boundaries on the electrical resistivity of polycrystalline copper and aluminium

TL;DR: In this paper, the contribution of electrical resistivity caused by grain boundaries has been measured in polycrystalline specimens of high purity copper and high purity aluminium and the specific grain boundary resistivity appeared to be independent of the impurity content, depended to a small extent on the temperature in the range 4·2 to 77°K.
Journal ArticleDOI

The Effect of Temperature of Deformation on the Electrical Resistivity of Cold-worked Metals and Alloys

T Broom
TL;DR: In this article, a special apparatus has been used to draw wires of various metals at temperatures between - 183°c and 100°c, and to measure their resistances at the temperature of drawing.
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