Patent
Growing smooth epitaxial layers on misoriented substrates
TLDR
In this article, a process for improving the smoothness of semiconductor layers grown by epitaxy is described, which is achieved by misorienting the growth surface of the substrate from a major crystallographic plane by a small critical angle approximately equal to the tread-to-riser angle of terraces.Abstract:
A process for improving the smoothness of semiconductor layers grown by epitaxy is described. Smooth epitaxial layers, free of crystal terraces, are attained by misorienting the growth surface of the substrate from a major crystallographic plane by a small critical angle approximately equal to the tread-to-riser angle of terraces which would be formed if the epitaxial layer were deposited on a growth surface nominally parallel to the major plane. The critical angle is a function of both the growth temperature and the crystal composition. Specific examples for the growth of LPE Al x Ga 1-x As at various growth temperatures and values of x on GaAs substrates misoriented from the (100) and (111)B major planes are given. Also described are examples of silicon layers grown by CVD on (111) substrates to measure the critical angle in the (112) direction.read more
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Compound semiconductor device
TL;DR: In this article, a compound semiconductor device having a transistor structure, including a substrate, a first layer formed on the substrate and comprising GaN, a second layer formed over the first layer and containing InN whose lattice constant is larger than the first one, and a third layer consisting over the second layer and including GaN whose energy bandgap is smaller than the second one, is presented.
Patent
Epitaxial overgrowth method and devices
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Low defect, high purity crystalline layers grown by selective deposition
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TL;DR: In this paper, the purity and perfection of a semiconductor is improved by depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank.
Patent
Superlattice geometry and devices
Arthur C. Gossard,Pierre Petroff +1 more
TL;DR: In this article, the authors describe submonolayer superlattices with periodic compositional variations in a direction parallel to the substrate surface as well as in the perpendicular direction.
Patent
Method for the production of SiC single crystals by using a specific substrate crystal orientation
TL;DR: In this paper, the authors provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward an off-direction, wherein the crystal orientation is defined by a deviation angle θ of 5 to 40 degrees.
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Patent
Semiconductor wafer with at least one epitaxial layer and methods of making same
Kenneth E. Bean,Walter R Runyan +1 more
Patent
Method of crystallizing a binary semiconductor compound
Andre Elie,Jean-Marc Le Duc +1 more
TL;DR: In this article, a method of crystallizing a binary semiconductor compound from a liquid solution of the compound in one of its components, e.g. gallium arsenide in gallium, is presented.
Patent
Epitaxial gallium arsenide
Abstract: 1.
A study has been made of the growth of epitaxial gallium arsenide films on planes having simple and complicated crystallographic indices over the substrate-orientation range (111)A-(100)-(111)B.
2.
The tangential velocity of an isolated growth step and the diffusion length for adsorbed atoms on the (111)A, (111)B, and (100) planes have been determined.
3.
The anisotropy in the growth rates of epitaxial films on various planes has been calculated; comparison shows a satisfactory agreement with experiment.