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Book ChapterDOI

Growth and Characterization of ZnO Nanostructures: Materials for CO and Ethanol Sensing

TLDR
In this paper, a controlled growth of ZnO-based nanostructures, starting from a vertical nanowall surface morphology to laterally grown highly anisotropic nanorods/wires formation has successfully been achieved by controlled thermal oxidation of thin Zn films for a temperature range of 100-700 °C.
Abstract
Controlled growth of ZnO-based nanostructures, starting from a vertical nanowall surface morphology to laterally grown highly anisotropic nanorods/wires formation has successfully been achieved by controlled thermal oxidation of thin Zn films for a temperature range of 100–700 °C. The as-grown ZnO nanorods were further used for carbon monoxide gas sensing at low temperatures (down to 150 °C) as well as ethanol vapour sensing at room temperatures. Thin films of Zn were deposited on glass and silicon substrate at room temperature, using a vacuum-assisted thermal evaporation technique. Structure, morphology and chemical property of ZnO layers were investigated using various surface characterization techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. The XRD and SEM results are in very good correlation and showed vertical growth morphology of ZnO nanowall/sheet structures at a relatively lower oxidation temperature up to 400 °C. However, at higher oxidation temperature, lateral growths started to dominate over the vertical growth. Oxidation at 700 °C appeared with laterally grown one-dimensional (1D) ZnO nanowires/rods of high density. Raman spectroscopy and XPS results suggested that the vertical growth is mainly initiated by the metallic Zn film morphology, whereas the lateral growth is strongly dominated by the oxide (ZnO) formation. Finally, laterally grown ZnO nanorods could successfully sense CO gas and ethanol vapour. A drastic enhancement in CO gas sensitivity for a concentration of 230 ppm was clearly observed in dynamic gas flow mode even for a wide range of operating temperature.

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References
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Journal ArticleDOI

Fundamentals of zinc oxide as a semiconductor

TL;DR: In this article, the status of zinc oxide as a semiconductor is discussed and the role of impurities and defects in the electrical conductivity of ZnO is discussed, as well as the possible causes of unintentional n-type conductivity.
Journal ArticleDOI

Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films

TL;DR: In this article, room-temperature ultraviolet (UV) laser emission of ZnO microcrystallite thin films is reported, which represents an important step towards the development of nanometer photoelectronics.
Journal ArticleDOI

Bound exciton and donor–acceptor pair recombinations in ZnO

TL;DR: In this paper, the optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminecence (CL) measurements.
Journal ArticleDOI

Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire.

TL;DR: A piezoelectric field effect transistor (PE-FET) that is composed of a ZnO nanowire (NW) bridging across two Ohmic contacts, in which the source to drain current is controlled by the bending of the NW.
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