Journal ArticleDOI
Growth of GaN films on circle array patterned Si (111) substrates
TLDR
In this paper, low defect density GaN was successfully grown on circle array patterned Si (111) substrate using AlN as the buffer followed by two steps growth of the GaN film.About:
This article is published in Journal of Crystal Growth.The article was published on 2014-09-01. It has received 6 citations till now. The article focuses on the topics: Grain boundary.read more
Citations
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Journal ArticleDOI
Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate.
Binh Tinh Tran,Hideki Hirayama +1 more
TL;DR: The growth of a high-quality AlN template on a micro-circle-patterned Si substrate is reported by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques, and a deep-ultraviolet light-emitting diode (UV-LED) device is fabricated and characterized using this AlN/ patterned Si.
Journal ArticleDOI
High-quality AlN template grown on a patterned Si(111) substrate
TL;DR: In this paper, a high-density micro-patterned Si(111) substrate was fabricated for high-quantum efficiency AlGaN-based deep-UV LED applications.
Patent
NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
Sansaptak Dasgupta,Han Wui Then,Sanaz K. Gardner,Benjamin Chu-Kung,Marko Radosavljevic,Seung Hoon Sung,Robert S. Chau +6 more
TL;DR: A fin over an insulating layer on a substrate having a first crystal orientation is modified to form a surface aligned along a second crystal orientation as mentioned in this paper, and a device layer is deposited over the surface of the fin aligned along the second crystal orientations.
References
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Journal ArticleDOI
GaN Growth Using GaN Buffer Layer
TL;DR: In this paper, the authors used a GaN buffer layer on a sapphire substrate to obtain an optically flat and smooth surface for gallium nitride (GaN) films.
Journal ArticleDOI
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
Eric Feltin,Bernard Beaumont,M. Laügt,P. de Mierry,Philippe Vennéguès,Hacene Lahreche,Mathieu Leroux,Pierre Gibart +7 more
TL;DR: In this article, the insertion of AlN/GaN superlattices was found to decrease the stress sufficiently for avoiding crack formation in an overgrown (2.5 μm) GaN layer.
Journal ArticleDOI
GaN‐based epitaxy on silicon: stress measurements
TL;DR: In this article, an in situ method for the determination of the stress in GaN layers on hetero-substrates, in particular Si, via measuring the wafer curvature is presented.
Journal ArticleDOI
Defect structure in selective area growth GaN pyramid on (111)Si substrate
TL;DR: In this article, a GaN pyramid grown selectively on a (111)Si substrate with a patterned dot structure of a SiO2 mask, by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer, was characterized by transmission electron microscopy.
Journal ArticleDOI
Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer
TL;DR: In this paper, it was shown that the thin gamma-Al2O3 layer of compliant GaN was an effective intermediate layer for the GaN film grown epitaxially on Si and the narrowest linewidth of the x-ray rocking curve for diffraction of 1.3 mu m GaN sample was 54 arcmin.