Journal ArticleDOI
High quality antireflection coatings on laser facets by sputtered silicon nitride
Gadi Eisenstein,L.W. Stulz +1 more
TLDR
High quality antireflection coatings of laser facets have been achieved using sputtered silicon nitride and similar films were also used to AR coat InGaAs PIN detectors thereby significantly increasing their responsivity.Abstract:
Single-layer antireflection (AR) coating films are used to transform semiconductor injection lasers into different kinds of active device. For example, a laser whose emitting facet reflectivities (one or both) are reduced to zero is transformed into a superluminescent diode or an optical amplifier, respectively. AR coated lasers are also very desirable in various configurations of a laser in an external cavity or as sources for optical fiber sensor applications. High quality antireflection coatings of laser facets have been achieved using sputtered silicon nitride. The emitting facets of InGaAsP lasers at 1.3 and 1.55 μm as well as of AlGaAs lasers at 0.85 μm were coated. The reflectivities achieved were consistently in the 0.01–0.03% range. Similar films were also used to AR coat InGaAs PIN detectors thereby significantly increasing their responsivity.read more
Citations
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Journal ArticleDOI
1.5 µm GaInAsP traveling-wave semiconductor laser amplifier
T. Saitoh,T. Mukai +1 more
TL;DR: In this article, the authors presented a theoretical and experimental study in terms of small-signal gain, signal gain saturation, and noise characteristics of a 1.5 μm GaInAsP traveling-wave amplifier (TWA), realized through the application of SiO x film antireflection coatings.
Journal ArticleDOI
Theoretical analysis and fabrication of antireflection coatings on laser-diode facets
TL;DR: In this article, the reflectivities of single and double-layer AR coatings on 1.55-μm GaInAsP/InP LD's were numerically calculated, and the optimum film parameters, such as thickness and refractive index, were obtained as functions of the active layer thickness.
Journal ArticleDOI
Recent progress in semiconductor laser amplifiers
Tadashi Saitoh,Takaaki Mukai +1 more
TL;DR: In this article, a GaInAsP traveling-wave semiconductor laser amplifiers (TWAs) for use in optical fiber transmission systems is discussed and the status of antireflection coating on laser-diode facets which are indispensable for TWAs is discussed.
Journal ArticleDOI
Timing jitter in mode‐locked and gain‐switched InGaAsP injection lasers
TL;DR: In this article, the pulse-to-pulse timing jitter in both mode-locked and gain-switched InGaAsP injection laser systems was characterized and the measured jitter is less than 1 ps and significantly less than the jitter reported for other laser systems.
Journal ArticleDOI
Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers
Li Fan,Mahmoud Fallahi,James T. Murray,Robert Bedford,Yushi Kaneda,Aramis R. Zakharian,Jörg Hader,Jerome V. Moloney,Wolfgang Stolz,Stephan W. Koch +9 more
TL;DR: In this article, a tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers (VECSELs) with a 20nm tuning range and narrow linewidth is demonstrated at room temperature.
References
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Journal ArticleDOI
Coherent optical fiber transmission systems
Yoshihisa Yamamoto,T. Kimura +1 more
TL;DR: In this paper, the feasibility of coherent optical fiber transmission systems was studied from the view point of device and system consideration and expected performance, in which laser coherence is utilized to carry information.
Journal ArticleDOI
Measurement of the modal reflectivity of an antireflection coating on a superluminescent diode
TL;DR: In this paper, a method for measuring the modal reflectivity of the antireflection coating applied to a laser diode is described and demonstrated based on measurements of the Fabry-Perot modulation depth of the resulting superluminescent diode output spectrum at the threshold current of the original laser.
Journal ArticleDOI
Optical thickness measurement of SiO2Si3N4 films on silicon
F. Reizman,W. van Gelder +1 more
TL;DR: In this article, the thickness of SiO 2 and Si 3 N 4 films was determined by an interference technique, using a spectrophotometer in the u.v. and visible wavelength range.
Journal ArticleDOI
Lateral confinement InGaAsP superluminescent diode at 1.3 µm
TL;DR: In this article, a superluminescent diode (SLD) was designed to meet a wide range of optical system needs and demonstrated in a lensed 0.23 NA, 50 μm diameter graded index core fiber with a power of 550 μW at 250 mA and 20°C.
Journal ArticleDOI
Theoretical design of single-layer antireflection coatings on laser facets
TL;DR: In this paper, optimum film parameters (thickness h and index of refraction n) are established for a wide range of InGaAsP lasers emitting at 1.3 μm.