Journal ArticleDOI
High-temperature cubic boron nitride p-N junction diode made at high pressure.
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A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700�C using a temperature-difference solvent method.Abstract:
A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700°C. A temperature-difference solvent method was used for the crystal growth, and beryllium and silicon were doped as acceptors and donors, respectively. Formation of the p-n junction was clearly confirmed at 1 bar by rectification characteristics and by existence of a space charge layer of the junction as observed by electron beam induced current measurement. This diode operated at 530°C.read more
Citations
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Journal ArticleDOI
Review of advances in cubic boron nitride film synthesis
TL;DR: A review of recent developments in BN film synthesis and characterization can be found in this paper, where the key experimental parameters controlling cBN film formation and synthesis techniques are discussed and the proposed mechanisms of cBN formation and the observed mechanical and electrical properties of CBN films are analyzed.
Journal ArticleDOI
III-V nitrides for electronic and optoelectronic applications
TL;DR: In this article, a review of recent developments in III-V nitride thin-film materials for electronic and optoelectronic applications is presented. But, the lack of a suitable substrate, with the possible exception of SiC for AlN, is a problem of considerable magnitude and is compounded by the presence of shallow donor bands in GaN and InN which are apparently caused by N vacancies.
Book ChapterDOI
Boron Nitrides — Properties, Synthesis and Applications
TL;DR: In this paper, the phase diagram of boron nitride is discussed, and applications of BN in ceramic materials and as lubricant are discussed. And low-pressure methods for nano-cBN deposition (PVD and Plasma CVD) are described.
Journal ArticleDOI
Prospects for device implementation of wide band gap semiconductors
TL;DR: In this paper, the current state of the art for producing semiconductor devices from these materials is evaluated, and recommendations for areas needing further research are outlined, as well as a review of current state-of-the-art techniques for these materials.
Journal ArticleDOI
Ultraviolet light‐emitting diode of a cubic boron nitride pn junction made at high pressure
TL;DR: Injection luminescence in the ultraviolet was observed from a cubic boron nitride pn junction diode made at high pressure as mentioned in this paper, and it was shown that the light emission occurs near the junction region only in the forward bias condition.
References
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Journal ArticleDOI
Nonmetallic crystals with high thermal conductivity
TL;DR: The diamond has the highest known thermal conductivity at 300k K at room temperature as discussed by the authors, and is the only non-metallic crystal with thermal conductivities of > 1 W/cmK at 300K.
Journal ArticleDOI
Lattice Infrared Spectra of Boron Nitride and Boron Monophosphide
Peter J. Gielisse,S. S. Mitra,J. N. Plendl,R. D. Griffis,L. C. Mansur,R. Marshall,E. A. Pascoe +6 more
TL;DR: In this paper, the infrared reflection spectrum of cubic boron nitride from 80 to 550 GHz was obtained with a beam condenser. Butler et al. showed that the absorption peaks were observed between 600 and 3000 GHz and assigned as combinations of four Brillouin-zone boundary modes: LO 1232, TO 1000, LA 685, TA 348 and TA 348.
Journal ArticleDOI
Theory of life time measurements with the scanning electron microscope: steady state
F Berz,HK Hendrik Kuiken +1 more
TL;DR: In this paper, a theoretical steady state analysis is given of the scanning electron microscope method of measuring bulk life time in diodes, where the plane of the junction is perpendicular to the surface.
Journal ArticleDOI
Preparation of Semiconducting Cubic Boron Nitride
TL;DR: In this article, the diffusion of impurities into cubic cubic BN crystals was not found to proceed as rapidly as with diamond, and pointcontact rectification effects have been observed among semiconducting cubic BNs and diamond crystals.