Journal ArticleDOI
Theory of life time measurements with the scanning electron microscope: steady state
F Berz,HK Hendrik Kuiken +1 more
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TLDR
In this paper, a theoretical steady state analysis is given of the scanning electron microscope method of measuring bulk life time in diodes, where the plane of the junction is perpendicular to the surface.Abstract:
A theoretical steady state analysis is given of the scanning electron microscope method of measuring bulk life time in diodes, where the plane of the junction is perpendicular to the surface. The current in the junction is obtained as a function of the beam power, the beam penetration into the semiconductor, the value of the surface recombination velocity, and the distance of the beam to the junction. Particular attention is paid to the injection level, and sufficient conditions are formulated for low and high injection, in terms of the beam current and voltage. A new method for measuring large surface recombination velocities is suggested.read more
Citations
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Charge collection scanning electron microscopy
TL;DR: A review of the application of the scanning electron microscope to the study and characterization of semiconductor materials and devices by the Electron Beam Induced Conductivity (EBIC) method can be found in this paper.
Journal ArticleDOI
High-temperature cubic boron nitride p-N junction diode made at high pressure.
TL;DR: A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700�C using a temperature-difference solvent method.
Journal ArticleDOI
A reciprocity theorem for charge collection
TL;DR: In this paper, it was shown that the current collected by a p−n junction in presence of a unit point generation of carriers at a point P is the same (apart from the dimensions) as the excess minority carrier density at P due to a unit density at the junction edge.
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A SEM-EBIC minority-carrier diffusion-length measurement technique
TL;DR: In this paper, a SEM-EBIC minority-carrier diffusion-length measurement technique is described, whereby an arrangement is used such that the electron beam is incident normal to the charge-collecting barrier; the barrier may be either that of a Schottky diode or of a shallow p-n junction.
Journal ArticleDOI
Radiation damage in InP single crystals and solar cells
TL;DR: In this article, it was shown that InP solar cells are more radiation resistant than Si and GaAs solar cells, and that a high carrier concentration p-InP substrate has lower concentration damage.
References
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Journal ArticleDOI
Statistics of the Recombinations of Holes and Electrons
William Shockley,W. T. Read +1 more
TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
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Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials
T. E. Everhart,P. H. Hoff +1 more
TL;DR: In this paper, a universal curve of energy-dissipation range vs normalized electron energy is proposed, which includes the average atomic number Z of the material being bombarded in the energy normalization factor.
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Injected Current Carrier Transport in a Semi‐Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination Velocities
TL;DR: In this article, a compact Stieltjesintegral derivation of the steady-state Green's functions for a point source of added carriers in a semi-infinite semiconductor and for infinite line and plane sources parallel to the surface is given.
Journal ArticleDOI
The Transport of Added Current Carriers in a Homogeneous Semiconductor
TL;DR: In this article, the authors derived the continuity equation for added carrier concentration in a form which exhibits the ambipolar nature of the diffusion, drift, and recombination mechanisms under electrical neutrality.