Journal ArticleDOI
High temperature heat contents of III-V semiconductor systems
Kimio Itagaki,K. Yamaguchi +1 more
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TLDR
In this article, the heat contents of the III-V compounds of AlN, GaN, AlP, GaP, InP, AlAs, GaAs, InAs, AlSb, GaSb and InSb were measured over the temperature range 650 to 1550K using a drop calorimeter.About:
This article is published in Thermochimica Acta.The article was published on 1990-06-29. It has received 42 citations till now. The article focuses on the topics: Heat capacity & Calorimeter.read more
Citations
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Journal ArticleDOI
The thermodynamic properties of phosphorus and solid binary phosphides.
Journal ArticleDOI
Thermodynamics and Phase Stability in the Ga–N System
TL;DR: In this paper, the decomposition of GaN powder was studied experimentally using two different customized thermogravimetric methods, dynamic oscillation TGA and isothermal stepping TGA, for a higher resolution of decomposition start.
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Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K
TL;DR: In this paper, the thermal conductivity of wideband-gap semiconductors of GaN and SiC has been investigated in a wide range of temperature conditions, including 150 and 850 K.
Journal ArticleDOI
Enthalpy of Formation of Gallium Nitride
Mandar R. Ranade,Franck Tessier,A. Navrotsky,Valerie J. Leppert,Subhash H. Risbud,Francis J. DiSalvo,C. M. Balkas +6 more
TL;DR: In this article, a major discrepancy in the literature concerning the enthalpy of formation of GaN has been resolved using oxidative oxide melt solution calorimetry, where four samples of differing nitrogen contents were measured by dropping them into molten 3Na2O·4MoO3 in a calorimeter at 975 K with oxygen gas bubbling through the solvent.
Journal ArticleDOI
Heat capacity of α-GaN : Isotope effects
R. K. Kremer,Manuel Cardona,E. Schmitt,J. Blumm,Stefan K. Estreicher,Mahdi Sanati,M. Bockowski,I. Grzegory,Tadeusz Suski,Andrzej Jeżowski +9 more
TL;DR: The dependence of the heat capacity on the isotopic mass has also been investigated recently for monatomic crystals such as diamond, silicon, and germanium as mentioned in this paper, as well as for more complex semiconductors.
References
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Journal ArticleDOI
Die durchschnittlichen Atomwärmen der AIII Bv-Halbleiter AlSb, GaAs, GaSb, InP, InAs, lnSb und die Atomwärme des Elements Germanium zwischen 12 und 273°K
TL;DR: In this paper, the durchschnittlichen Atomwärmen der Verbindungshalbleiter AlSb, GaAs, GaSb and Germanium zwischen 10 and 273°K were gemessen.
Journal ArticleDOI
On the thermodynamic properties of the III–V compounds InSb, GaSb, and InAs
Werner F Schottky,M. B. Bever +1 more
TL;DR: In this article, the heats of formation of the III-V compounds InSb, GaSb and InAs at 0°C were measured by tin solution calorimetry.
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Heat contents and heats of fusion of III-V compounds
Ronald Harley Cox,Monte J. Pool +1 more
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Calorimetric studies of the heats of formation of IIIB-VB adamantine phases
S. Martosudirdjo,J.N. Pratt +1 more
TL;DR: In this paper, the authors used precipitation and solution calorimetry techniques to measure the heats of formation of six IIIB-VB semiconductor compounds and examined the validity of published theoretical estimates of the heats.