Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces
Jia Juen Ong,Wei Lan Chiu,Ou-Hsiang Lee,Chia-Wen Chiang,Hsiang-Hung Chang,Chin-Hung Wang,Kai Cheng Shie,Shihe Yang,Dinh Phuc Tran,King-Ning Tu,Chih Chen +10 more
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In this paper , the authors adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding.Abstract:
We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding. Electroplating was employed to fabricate arrays of Cu vias with 78% (111) surface grains. The bonding temperature can be lowered to 200 °C, and the pressure is as low as 1.06 MPa. The bonding process can be accomplished by a 12-inch wafer-to-wafer scheme. The measured specific contact resistance is 1.2 × 10−9 Ω·cm2, which is the lowest value reported in related literature for Cu-Cu joints bonded below 300 °C. The joints possess excellent thermal stability up to 375 °C. The bonding mechanism is also presented to provide more understanding on hybrid bonding.read more
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References
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Journal ArticleDOI
Ultrahigh strength and high electrical conductivity in copper
TL;DR: Pure copper samples with a high density of nanoscale growth twins are synthesized and show a tensile strength about 10 times higher than that of conventional coarse-grained copper, while retaining an electrical conductivity comparable to that of pure copper.
Journal ArticleDOI
Observation of atomic diffusion at twin-modified grain boundaries in copper
TL;DR: The triple point where a twin boundary meets a grain boundary was found to slow down grain-boundary and surface electromigration by one order of magnitude, and it is proposed that this occurs because of the incubation time of nucleation of a new step at the triple points.
Journal ArticleDOI
Unidirectional Growth of Microbumps on (111)-Oriented and Nanotwinned Copper
Hsiang Yao Hsiao,Chien Min Liu,Han Wen Lin,Tao Chi Liu,Chia Ling Lu,Yi Sa Huang,Chih Chen,King-Ning Tu +7 more
TL;DR: The highly oriented and nanotwinned Cu (nt-Cu) allow for the unidirectional growth of Cu6Sn5 intermetallics in the microbumps of three-dimensional integrated-circuit packaging; a uniform microstructure in a large number of microbump of controlled orientation can be obtained.
Journal ArticleDOI
Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu
Chien Min Liu,Han Wen Lin,Yi Sa Huang,Yi Cheng Chu,Chih Chen,Dian Rong Lyu,Kuan-Neng Chen,King-Ning Tu +7 more
TL;DR: Direct Cu-to-Cu bonding was achieved at temperatures of 150–250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10–60 min at 10−3 torr.
Proceedings ArticleDOI
Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding
Y. Kagawa,N. Fujii,K. Aoyagi,Y. Kobayashi,S. Nishi,N. Todaka,S. Takeshita,J. Taura,Hirotsugu Takahashi,Y. Nishimura,K. Tatani,M. Kawamura,H. Nakayama,Takashi Nagano,K. Ohno,Hayato Iwamoto,Shingo Kadomura,Teruo Hirayama +17 more
TL;DR: Wang et al. as mentioned in this paper have successfully mass-produced novel stacked back-illuminated CMOS image sensors (BI-CIS), which introduced advanced Cu2Cu hybrid bonding that had developed.