Journal ArticleDOI
IGBT History, State-of-the-Art, and Future Prospects
Noriyuki Iwamuro,Thomas Laska +1 more
TLDR
An overview on the history of the development of insulated gate bipolar transistors (IGBTs) as one key component in today's power electronic systems is given; the state-of-the-art device concepts are explained as well as an detailed outlook about ongoing and foreseeable development steps is shown as discussed by the authors.Abstract:
An overview on the history of the development of insulated gate bipolar transistors (IGBTs) as one key component in today’s power electronic systems is given; the state-of-the-art device concepts are explained as well as an detailed outlook about ongoing and foreseeable development steps is shown. All these measures will result on the one hand in ongoing power density and efficiency increase as important contributors for worldwide energy saving and environmental protection efforts. On the other hand, the exciting competition of more maturing Si IGBT technology with the wide bandgap successors of GaN and SiC switches will go on.read more
Citations
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Journal ArticleDOI
Defect engineering in SiC technology for high-voltage power devices
Tsunenobu Kimoto,Heiji Watanabe +1 more
Journal ArticleDOI
Advanced Control of Grid-Connected Current Source Converter Under Unbalanced Grid Voltage Conditions
TL;DR: Both the low-frequency dc-side ripple and ac-side current harmonics can be significantly reduced with a simple control structure, due to the direct control concept, in this paper.
Journal ArticleDOI
Optimal Space Vector Modulation of Current-Source Converter for DC-Link Current Ripple Reduction
TL;DR: A new space vector control strategy is proposed to reduce the ripple with no need of increasing the switching frequency or inductance and is implemented on the TMS320F28335DSP + XC3400FPGA digital control hardware platform.
Journal ArticleDOI
Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules
TL;DR: The adoption of the inherent emitter stray inductance in high-power insulated gate bipolar transistor modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP) is proposed.
Journal ArticleDOI
Thermal Parameter Monitoring of IGBT Module Using Case Temperature
TL;DR: In this paper, the authors proposed to monitor the thermal parameters of insulated gate bipolar transistor (IGBT) module using the case temperature, which is able to eliminate the influence of thermal interface material (TIM) degradation on the monitored results.
References
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Proceedings ArticleDOI
The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential
TL;DR: In this paper, a vertical shrink of the NPT IGBT to a structure with a thin n/sup -/ base and a low doped field stop layer was proposed.
Proceedings ArticleDOI
The insulated gate rectifier (IGR): A new power switching device
TL;DR: In this paper, a new power semiconductor device called the Insulated Gate Rectifier (IGR) is described, which has the advantages of operating at high current densities while requiring low gate drive power.
Proceedings ArticleDOI
A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
TL;DR: In this paper, the authors proposed a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices.
Journal ArticleDOI
The COMFET—A new high conductance MOS-gated device
TL;DR: In this article, a new MOS gate-controlled power switch with a very low on-resistance is described, which employs an n-epitaxial layer grown on a p+substrate.
A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
TL;DR: In this paper, the authors proposed a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices.