Journal ArticleDOI
Influence of the nature of the Si substrate on nickel silicide formed from thin Ni films
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TLDR
In this article, the authors investigate the rate of silicide formation and the composition of the resulting compound when thin Ni films vacuum deposited onto various substrates are annealed from 200 °C to 325 °C and from 1 2 to 24 h.About:
This article is published in Thin Solid Films.The article was published on 1976-10-18. It has received 170 citations till now. The article focuses on the topics: Silicide & Amorphous solid.read more
Citations
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Diffusion barriers in thin films
TL;DR: In this article, the concept of sacrificial barrier is introduced, which is based on an irreversible loss of barrier material by interfacial reactions with the adjoining metals, and successful applications are presented.
Journal ArticleDOI
Growth kinetics of planar binary diffusion couples: ’’Thin‐film case’’ versus ’’bulk cases’’
U. Gösele,King-Ning Tu +1 more
TL;DR: In this paper, it is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin.
Journal ArticleDOI
Silicides and ohmic contacts
Jeffrey P. Gambino,E.G. Colgan +1 more
TL;DR: An overview of the scientific and technological aspects of silicides and ohmic contacts, including the electrical properties of metal-Si contacts, metal and silicide deposition techniques, metal reactions, silicide patterning processes, and device degradation due to silicides, is given in this article.
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Kinetics of formation of silicides: A review
François M. d'Heurle,P. Gas +1 more
TL;DR: In this paper, the authors classified the kinetics of silicide growth into three different categories: diffusion controlled, nucleation controlled, and reaction rate controlled, with the aim of understanding both the phenomenology of growth and the specific atomic mechanisms of phase formation.
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Nucleation of a new phase from the interaction of two adjacent phases: Some silicides
TL;DR: In this paper, a class of reactions where nucleation dominates the formation of a new phase is discussed, and a salient feature of these reactions is the absence of any equilibrium temperature, although the nucleation temperatures are relatively well defined within narrow limits.
References
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Journal ArticleDOI
Selective growth of metal‐rich silicide of near‐noble metals
TL;DR: In this paper, it has been shown that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
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Structure and growth kinetics of Ni2Si on silicon
TL;DR: The phase Ni 2 Si has been found to form on reacting evaporated Ni films with Si single-crystal substrates at temperatures ranging from 200° to 325°C as discussed by the authors.
Journal ArticleDOI
Growth Kinetics Observed in the Formation of Metal Silicides on Silicon
R. W. Bower,J. W. Mayer +1 more
TL;DR: In this paper, the authors used backscattering of MeV He ions to investigate the composition and growth kinetics of metal silicides formed from thin films of Pd, Ti, Cr, and Mo evaporated onto Si.
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Kinetics and mechanism of platinum silicide formation on silicon
J. M. Poate,T. C. Tisone +1 more
TL;DR: In this paper, the growth of platinum silicide layers has been observed using Rutherford backscattering, and it is possible to deduce that Si is the diffusing species with the reaction occurring at either the Pt2Si−Pt, PtSi-Pt2Si, or PtSi•Pt interfaces.