InN as THz emitter excited at 1060 nm and 800 nm

TLDR: In this article, a novel semiconductor material, called InN, was used as THz surface emitter and the material was irradiated with fs-laser pulses at 1060 nm and 800 nm and the emitted ultrashort THz pulses were measured by phase sensitive detection.

Abstract: InN, a novel semiconductor material, is used as THz surface emitter. The material is irradiated with fs-laser pulses at 1060 nm and 800 nm and the emitted ultrashort THz pulses are measured by phase sensitive detection. Pulsforms, amplitudes and spectra are compared to the THz emission of p-doped InAs, the standard material for THz surface emission.