Journal ArticleDOI
Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperature
TLDR
In this paper, the 0 to 1 inter-sub-band electronic transition in (100) GaAs/Al 0.35Ga0.65As multi-quantum well structures as a function of temperature between 4.2 K and room temperature was studied.Abstract:
The 0 to 1 inter-sub-band electronic transition is studied in (100) GaAs/Al0.35Ga0.65As multi-quantum well structures as a function of temperature between 4.2 K and room temperature. Samples doped in the barrier or in the well are compared. A lineshape calculation allows the authors to separate the broadening of a single energy state from the intrinsic broadening caused by the different sub-band dispersions. Qualitatively different behaviour is found for modulation doped and well doped samples.read more
Citations
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Journal ArticleDOI
Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities
TL;DR: In this article, the inter-subband absorption linewidth of GaAs quantum wells was calculated due to scattering by interface roughness, LO phonons, LA phonons and ionized impurity.
Journal ArticleDOI
Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well
Takeya Unuma,Teruyuki Takahashi,Takeshi Noda,Masahiro Yoshita,Hiroyuki Sakaki,Motoyoshi Baba,Hidefumi Akiyama +6 more
TL;DR: In this article, the effects of interface roughness and phonon scattering on inter-band absorption linewidth in a modulation-doped GaAs/AlAs quantum well were investigated.
Journal ArticleDOI
Infrared spectroscopy and transport of electrons in semiconductor superlattices
TL;DR: In this paper, a framework for the description of optical transitions between and within minibands is developed for superlattice physics and the most striking phenomena observed in this context are the van Hove singularities in the miniband joint density of states, the thermal quenching of miniband conductivity, and magnetic miniband breakdown.
Book ChapterDOI
Chapter 1 The Basic Physics of Intersubband Transitions
TL;DR: In this article, the authors focus on the basic aspects of intersubband transitions, with the main emphasis on linear absorption, using Fermi's golden rule for induced transition rate in the framework of one-band effective mass approximation.
References
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Journal ArticleDOI
First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
L. C. West,S. J. Eglash +1 more
TL;DR: In this paper, a dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST).
Journal ArticleDOI
Interband critical points of GaAs and their temperature dependence
TL;DR: The experiments indicate that up to room temperature the localized Lorentzian interacting with the continuum is dominant, whereas at higher temperatures the modification of the two-dimensional Van Hove singularity due to the electron-hole attractive perturbation is a better description of the measurements.
Journal ArticleDOI
New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
TL;DR: In this article, a 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs was proposed, which achieved a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.
Journal ArticleDOI
k → · p → perturbation theory in III-V compounds and alloys: a reexamination
C. Hermann,Claude Weisbuch +1 more
TL;DR: In this article, an experimental value of the interband matrix element (P}^{2} was derived with a precision of 10% in a three-band calculation, whereas a multiband approximation is required for ${m}^{*}$.
Journal ArticleDOI
Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
B. F. Levine,R. J. Malik,James A. Walker,Kwong-Kit Choi,C. G. Bethea,D. A. Kleinman,J. M. Vandenberg +6 more
TL;DR: In this article, the infrared intersubband absorption at 8.2 μm in doped GaAs/AlAs quantum well superlattices was measured, with 95% of the incident infrared energy being absorbed.
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First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
L. C. West,S. J. Eglash +1 more