Journal ArticleDOI
Interfacial work functions and extrinsic silicon infrared photocathodes
TLDR
In this paper, it was shown that n+ and/or p+ contacts on p−i−n diodes can function as solid-state photoemitters at temperatures ≲20 K.Abstract:
It is shown that n+ and/or p+ contacts on p‐i‐n diodes can function as solid‐state photoemitters at temperatures ≲20 K. Infrared radiation can excite electrons or holes over small n‐i or p‐i interfacial barriers and into the intrinsic region when the diode is forward biased. Photoelectric thresholds in the far infrared corresponding to 37 and 61 μm cutoffs have been observed for silicon devices using a Fourier transform spectrometer. Suggestions are made to tailor the cutoff wavelengths using different concentrations of various impurities near the metal‐insulator transition. Epitaxially grown multilayered (superlattice) detectors are proposed.read more
Citations
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Impurity Conduction at Low Concentrations.
TL;DR: In this article, the conductivity of an n-type semiconductor has been calculated in the region of low-temperature $T$ and low impurity concentration ${n}_{D}$.
Journal Article
Homojunction internal photoemission far-infrared detectors: Photoresponse performance analysis
TL;DR: In this paper, a detailed photoresponse analysis of type-II detectors is presented, and the results are useful for the design and optimization of type II detectors, as well as their optimization in the context of type 2 detectors.
Journal ArticleDOI
Homojunction internal photoemission far‐infrared detectors: Photoresponse performance analysis
TL;DR: In this article, the concept of homojunction internal photoemission far-infrared (FIR) detectors has been successfully demonstrated using forward biased Si p−i−n diodes at 42 K.
Journal ArticleDOI
The behavior of silicon p‐n junction‐based devices at liquid helium temperatures
TL;DR: In this article, the forward currentvoltage characteristics of Si pn junction diodes, fabricated in different state-of-the-art complementary metaloxide-semiconductor (CMOS) technologies, are investigated at liquid helium temperatures.
Journal ArticleDOI
GaAs multilayer p+-i homojunction far-infrared detectors
A. G. U. Perera,H. X. Yuan,S. K. Gamage,Wenzhong Shen,M. H. Francombe,H. C. Liu,Margaret Buchanan,William J. Schaff +7 more
TL;DR: In this paper, a molecular beam epitaxy grown wavelength tunable GaAs p+-i homojunction interfacial work function internal photoemission far-infrared detector is developed.
References
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Journal ArticleDOI
Electron Emission in Intense Electric Fields
Ralph Howard Fowler,L. Nordheim +1 more
TL;DR: In this article, the main features of the extraction of electrons from cold metals by intense electric fields are well known, and an approximate theory of the effect was first developed by Schottky.
Journal ArticleDOI
Uber einen die Erzeugung und Verwandlung des Lichtes betreffenden heuristischen Gesichtspunkt
TL;DR: In el marco del Proyecto subvencionado by the Fundación Antorchas (FAN) as mentioned in this paper, el material was digitalizado, e.g., en la Biblioteca del Departamento de Fisica de la Facultad de Ciencias Exactas de la Universidad Nacional de La Plata.
Book
Metal-insulator transitions
TL;DR: In this article, a discussion is given of some aspects of the metal insulator transition and the status of the "minimum metallic conductivity" is discussed, and the concept is valid for liquids and in some, but not all, solid systems.
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