Journal ArticleDOI
Investigation of RuZn alloy as barrier to Cu interconnect
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This article is published in Journal of Materials Science: Materials in Electronics.The article was published on 2022-02-01. It has received 3 citations till now. The article focuses on the topics: Diffusion barrier & Annealing (glass).read more
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Nucleation-controlled growth of Cu thin films electrodeposited directly on ALD Ru diffusion barrier in additive-free electrolyte for Cu interconnect
TL;DR: In this paper , direct Cu electrodeposition on a 3-nmthick atomic layer-deposited (ALD) Ru diffusion barrier layer was investigated for Cu interconnect in Si-based microelectronic devices.
Journal ArticleDOI
Self-Formation of a Ru/ZnO Multifunctional Bilayer for the Next-Generation Interconnect Technology via Area-Selective Atomic Layer Deposition.
Yukimasa Mori,Taehoon Cheon,Y. Kotsugi,Youn-Hye Kim,Ye Jin Park,Mohd. Zahid Ansari,Debananda Mohapatra,Yu Jang,Jong Seong Bae,Woo Ju Kwon,Ga-Hee Kim,Young-Bae Park,Han Lee,Wooseok Song,Soo Hyun Kim +14 more
TL;DR: In this article , an area-selective atomic layer deposition (ALD) was used to grow a Ru/ZnO bilayer for advanced Cu metallization, and the effect of ZnO on the Ru/SiO2 structure interfacial adhesion energy was investigated using a double-cantileverbeam test.
Journal ArticleDOI
In Situ Annealing Behavior of Cu Thin Films Deposited over Co-W Diffusion Barrier Layers
TL;DR: In this article , the authors used an in situ scanning-electron-microscopy (SEM) approach to assess how heating rates affect dewetting behavior, as well as to determine the limits of annealing of 40 nm-thick Cu films deposited over this substrate.
References
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Journal ArticleDOI
Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn
TL;DR: Biesinger et al. as mentioned in this paper proposed a more consistent and effective approach to curve fitting based on a combination of standard spectra from quality reference samples, a survey of appropriate literature databases and/or a compilation of literature references and specific literature references where fitting procedures are available.
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5 nm Ruthenium Thin Film as a Directly Plateable Copper Diffusion Barrier
Tiruchirapalli Arunagiri,Yibin Zhang,Oliver Chyan,M. El-Bouanani,M. J. Kim,Kuei-Hsien Chen,Chiu-Hsien Wu,Li-Chyong Chen +7 more
TL;DR: In this paper, a 5nm ruthenium film supported by silicon was investigated using Rutherford backscattering and high-resolution analytical electron microscopy, and it was demonstrated that 5nm Ru can function as a directly plateable Cu diffusion barrier up to at least 300°C vacuum anneal.
Journal ArticleDOI
Liner materials for direct electrodeposition of Cu
TL;DR: In this article, the authors identified a family of materials which can be directly electroplated with Cu in acidic plating baths commonly found in the microelectronics industry and demonstrated the direct plating of Cu across an 8 in. wafer without the use of a Cu seed layer.
Journal ArticleDOI
Diffusion Studies of Copper on Ruthenium Thin Film A Plateable Copper Diffusion Barrier
R. Chan,Tiruchirapalli Arunagiri,Yibin Zhang,Oliver Chyan,Robert M. Wallace,M. J. Kim,Trace Hurd +6 more
TL;DR: In this article, secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used for diffusion studies on physical vapor deposited Cu/Ru(∼20 nm)/Si samples.