Investigation of some group III-V dilute nitride materials grown by liquid phase epitaxy
01 Dec 2007-pp 307-310
TL;DR: In this paper, the growth melt for these materials were prepared by using either polycrystalline GaN or InN powder as the source of nitrogen for Ga-based or In-based compounds, respectively.
Abstract: We review here our work on the growth of dilute GaAsN, GaSbN and InAsN epitaxial layers using a novel liquid phase epitaxy technique, first developed by us. The growth melt for these materials were prepared by using either polycrystalline GaN or InN powder as the source of nitrogen for Ga-based or In-based compounds, respectively. The nitrogen content in the grown materials was obtained through various characterization techniques, namely, energy dispersive X-rays, high resolution X-ray diffraction, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. Nitrogen-induced deep levels in some materials have been identified and investigated.
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TL;DR: In this paper, the main roadblock to the development of these solar cell devices is poor minority-carrier transport in the III-N-V materials, and the present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs matched to Si is reviewed.
Abstract: III–N–V semiconductors are promising materials for use in next-generation multijunction solar cells because these materials can be lattice matched to substrates such as GaAs, Ge and Si, with a range of bandgaps that are complementary to those of other III–V semiconductors. Several potentially high-efficiency multijunction photovoltaic device designs using III–N–V materials are discussed. The main roadblock to the development of these solar cell devices is poor minority-carrier transport in the III–N–V materials. The present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs lattice matched to Si is reviewed.
324 citations
"Investigation of some group III-V d..." refers background in this paper
...techniques. The materials have already found applications for the realization of various electronic and optoelectronic devices [16-18]and high efficiency solar cells[ 19 ] However, increased amount of nitrogen is reported to cause a major degradation of the material which remains a problem for the successful application of the material in certain devices....
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TL;DR: In this article, the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3 and PH3 as the column V sources were conducted.
Abstract: A study of the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3 and PH3 as the column V sources was conducted. The 77 K photoluminescence spectra of the N‐doped epitaxial GaP showed a continuous redshift, from 5691 A (2.18 eV) to 6600 A (1.88 eV), resulted when the N concentration exceeded ∼5–7×1019 cm−3. This energy shift was found to be consistent with energy gap predictions using the dielectric theory of electronegativity for the GaP1−xNx system. The data also indicate that the emission intensity was maximum for N∼1×1020 cm−3, and then monotonically decreases with increasing N content. This is consistent with the formation of an indirect band‐gap semiconductor.
180 citations
TL;DR: In this article, the authors showed that incorporation of small amounts of nitrogen into conventional III-V compounds to form III-N-V alloys leads to splitting of the conduction band into two subbands.
Abstract: Recent high hydrostatic pressure experiments have shown that incorporation of small amounts of nitrogen into conventional III–V compounds to form III–N–V alloys leads to splitting of the conduction band into two subbands. The downward shift of the lower subband edge is responsible for the observed, large reduction of the fundamental band gaps in III–N–V alloys. The observed effects were explained by an anticrossing interaction between the conduction band states close to the center of the Brillouin zone and localized nitrogen states. The interaction leads to a change in the nature of the fundamental from the indirect gap in GaP to a direct gap in GaNP. The predictions of the band anticrossing model of enlarged electron effective mass and enhanced donor activation efficiency were confirmed by experiments in GaInNAs alloys.
131 citations
"Investigation of some group III-V d..." refers background in this paper
...The bandgap reduction is supposed to be due to the localized interaction between the host conduction band and narrow resonant level, formed by the nitrogen states which splits the conduction band into subbands E +, E- as described by the band anticrossing (BAC) model [ 4 ]....
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TL;DR: In this paper, the growth and properties of GaNAsSb alloys are investigated and compared with those of other dilute III-N-V-V alloys.
Abstract: Growth and properties of GaNAsSb alloys are investigated and compared with those of other dilute III–N–V alloys. Similar properties are observed including very high bandgap bowing, carrier localization at low temperature, sensitivity to thermal annealing and passivation of N-related electronic states by hydrogen. On the other hand, we point out some features of this alloy system and evaluate its potential for device applications. Probably, GaNAsSb can achieve emission at longer wavelengths than GaInNAs alloys grown to date. Its conduction- and valence-band offsets can be independently tuned by adjusting the N and Sb composition, respectively. Since this compound has a single group III element, its electronic structure should be less dependent on alloy configuration than GaInNAs.
99 citations
"Investigation of some group III-V d..." refers methods in this paper
...Several group III-V dilute nitride materials, such as, GaAsN [5], InPN [6], GaPN [7], InGaAsN [8], GaSbN [9], GaAsNSb [ 10 ]and InGaAsSbN [11,12] have been obtained by molecular beam epitaxy (MBE) [13], metalorganic vapor phase epitaxy (MOVPE) [14] and ion implantation [15]...
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TL;DR: The N incorporation behavior in InP grown by gas-source molecular beam epitaxy using a N radical beam source has been investigated in this article, where it was shown that increasing the growth temperature will result in a loss of N incorporation into the InP as a result of faster desorption of the N at high temperatures.
Abstract: The N incorporation behavior in InP grown by gas‐source molecular beam epitaxy using a N radical beam source has been investigated. At a given growth temperature, the N composition in InNxP1−x is generally different from the N2 flow‐rate fraction in the vapor phase, and as the N2 flow‐rate fraction increases, it saturates after increasing to a certain point. This may be due to the small solubility of N in InP. Increasing the growth temperature will result in a loss of N incorporation into the InP as a result of the faster desorption of the N at high temperatures. Optical absorption measurements reveal that the band‐gap energy of InNxP1−x decreases drastically, resulting in band‐gap bowing.
98 citations