Proceedings ArticleDOI
Investigation of some group III-V dilute nitride materials grown by liquid phase epitaxy
S. Dhar
- pp 307-310
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TLDR
In this paper, the growth melt for these materials were prepared by using either polycrystalline GaN or InN powder as the source of nitrogen for Ga-based or In-based compounds, respectively.Abstract:
We review here our work on the growth of dilute GaAsN, GaSbN and InAsN epitaxial layers using a novel liquid phase epitaxy technique, first developed by us. The growth melt for these materials were prepared by using either polycrystalline GaN or InN powder as the source of nitrogen for Ga-based or In-based compounds, respectively. The nitrogen content in the grown materials was obtained through various characterization techniques, namely, energy dispersive X-rays, high resolution X-ray diffraction, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. Nitrogen-induced deep levels in some materials have been identified and investigated.read more
References
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Journal ArticleDOI
III-N-V semiconductors for solar photovoltaic applications
J. F. Geisz,Daniel J. Friedman +1 more
TL;DR: In this paper, the main roadblock to the development of these solar cell devices is poor minority-carrier transport in the III-N-V materials, and the present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs matched to Si is reviewed.
Journal ArticleDOI
Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen content
TL;DR: In this article, the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3 and PH3 as the column V sources were conducted.
Journal ArticleDOI
Band Anticrossing in III-N-V Alloys
W. Shan,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,E. E. Haller,J. F. Geisz,Daniel J. Friedman,J. M. Olson,Sarah Kurtz,H.P. Xin,Charles W. Tu +10 more
TL;DR: In this article, the authors showed that incorporation of small amounts of nitrogen into conventional III-V compounds to form III-N-V alloys leads to splitting of the conduction band into two subbands.
Journal ArticleDOI
GaNAsSb: how does it compare with other dilute III-V-nitride alloys?
Jean-Christophe Harmand,A. Caliman,E. V. K. Rao,Ludovic Largeau,J. Ramos,Roland Teissier,Laurent Travers,G. Ungaro,B. Theys,Ivan Frederico Lupiano Dias +9 more
TL;DR: In this paper, the growth and properties of GaNAsSb alloys are investigated and compared with those of other dilute III-N-V-V alloys.
Journal ArticleDOI
N incorporation in InP and band gap bowing of InNxP1−x
W. G. Bi,Charles W. Tu +1 more
TL;DR: The N incorporation behavior in InP grown by gas-source molecular beam epitaxy using a N radical beam source has been investigated in this article, where it was shown that increasing the growth temperature will result in a loss of N incorporation into the InP as a result of faster desorption of the N at high temperatures.