Journal ArticleDOI
Ion beam synthesis of 3C–(Si1–xC1–y)Gex+y solid solutions
Petia Weih,Th. Stauden,Gernot Ecke,S. Shokhovets,Ch. Zgheib,Ch. Zgheib,M. Voelskow,Wolfgang Skorupa,Oliver Ambacher,Joerg Pezoldt +9 more
Reads0
Chats0
TLDR
In this paper, cubic 3C-(Si 1-x C 1-y )Ge x+y solid solutions were created by using ion beam synthesis and implanted with Ge atoms in the Silicon Carbide lattice.Abstract:
In the present study cubic 3C-(Si 1-x C 1-y )Ge x+y solid solutions were created by using ion beam synthesis. 3C-SiC thin layers grown on on-axis Si (111) substrates by Molecular Beam Epitaxy were implanted with Ge in order to incorporate Ge atoms in the Silicon Carbide lattice. Two series of experiments were carried out. The implantation energy was chosen to be 140 keV and 200 keV and the implantation dose 1 × 10 17 cm -2 and 4.7 × 10 16 cm -2 respectively. The samples were annealed under rapid thermal annealing conditions in the temperature range between 800 °C and 1300 °C. X-ray diffraction measurements indicate an enlargement of the lattice constant. The observed higher absorption in the implanted layers could be a sign of a band gap reduction as a consequence of Ge incorporation.read more
Citations
More filters
Journal ArticleDOI
Solid phase epitaxial growth of 3C–SiC thin film on Si and annihilation of nanopores
Ramasis Goswami,Connie H. Li,Glenn G. Jernigan,Phillip E. Thompson,C.S. Hellberg,B. T. Jonker +5 more
TL;DR: The solid phase epitaxial growth of 3C-SiC, 2-5-nm thick, on (0-0-1) Si by annealing 1-2-nm carbon overlayers has been investigated by transmission electron microscopy and X-ray photoelectron spectroscopy as mentioned in this paper.
Journal ArticleDOI
Ion beam synthesis of 4H-(Si1–xC1–y)Gex +y solid solutions
TL;DR: In this article, rapid thermal annealing at 1300 °C reduces the residual damage, increases the lattice site occupation and leads to negligible change in the concentration profiles, while increasing the implantation dose above 10%.
References
More filters
Journal ArticleDOI
Amorphization and recrystallization of 6H‐SiC by ion‐beam irradiation
TL;DR: Amorphization of 6H-SiC with 200 keV Ge+ ions at room temperature and subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 300 keV Si+ ion at 480 °C have been studied by Rutherford backscattering spectrometry/channeling and transmission electron microscopy analysis.
Journal ArticleDOI
A theoretical study of stability, electronic, and optical properties of GeC and SnC
TL;DR: In this article, a linear combination of atomic orbitals approach in the framework of density functional theory is employed for total energy calculations in the zincblende phase, which yields the lattice constant of 4.61 and 5.17 A and the bulk modulus of 181 and 119 GPa for GeC and SnC, respectively.
Journal ArticleDOI
Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing
Ch. Schubert,Ute Kaiser,A. Hedler,Werner Wesch,Tatiana Gorelik,Uwe Glatzel,J. Kräußlich,B. Wunderlich,G. Heß,K. Goetz +9 more
TL;DR: Ge nanocrystals were produced in 4H-SiC by implantation of 250 keV Ge+ ions with a dose of 1×1016 cm−2 and subsequent rapid thermal annealing at 1400-1600 °C.
Journal ArticleDOI
Radiation damage and annealing behaviour of Ge+-implanted SiC
Y. Pacaud,J. Stoemenos,G. Brauer,Rossen Yankov,V. Heera,Matthias Voelskow,Reinhard Kögler,Wolfgang Skorupa +7 more
TL;DR: In this paper, the defect reduction and recrysallization during annealing of Ge+-implanted 6H-SiC Implants have been performed at 200 keV with doses of 1 × 1014 and 1 × 1.5 cm−2 Furnace Annealing has been carried out at temperatures of 500, 950 and 1500°C
Journal ArticleDOI
Nanocrystal formation in hexagonal SiC after Ge+ ion implantation.
TL;DR: High-resolution and analytical electron microscopy techniques are used to characterize Ge-implanted hexagonal SiC, and small nanocrystals of strained cubic and hexagonal (or faulted cubic) Ge and Ge Si form.