Proceedings ArticleDOI
Kinetics of photoexcited carriers in WSe2 monolayer under high excitation
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In this article, the relaxation kinetics of photoexcited carriers were studied in WSe 2 monolayers on Si/SiO 2 substrate by optical pump-probe technique with detection of transient reflectivity.Abstract:
Relaxation kinetics of photoexcited carriers is studied in WSe 2 monolayers on Si/SiO 2 substrate by optical pump-probe technique with detection of transient reflectivity. Excitation wavelength falls in the vicinity of the excitonic resonance. Experimental reflectivity transient dependences are fitted using two-time-constant model, the first one correspondent to carrier phonon relaxation time, the second one correspondent to carrier recombination. The amplitude of transient reflectivity is described in terms of complex dielectric function with band gap renormalization and band filling being taken into account.read more
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Journal Article
Observation of Rapid Exciton-Exciton Annihilation in Monolayer Molybdenum Disulfide
Dezheng Sun,Yi Rao,Georg A. Reider,Gugang Chen,Yumeng You,Louis Br 'ezin,Avetik Harutyunyan,Tony F. Heinz +7 more
TL;DR: In this article, the existence of efficient exciton-exciton annihilation, a four-body interaction, in monolayer MoS2 was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density.
References
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Journal ArticleDOI
Direct Measurement of the Thickness-Dependent Electronic Band Structure of MoS2 Using Angle-Resolved Photoemission Spectroscopy
Wencan Jin,Po-Chun Yeh,Nader Zaki,Datong Zhang,Jerzy T. Sadowski,Abdullah Al-Mahboob,Arend M. van der Zande,Daniel Chenet,Jerry I. Dadap,Irving P. Herman,Peter Sutter,James Hone,Richard M. Osgood +12 more
TL;DR: Micrometer-scale angle-resolved photoemission spectroscopy of mechanically exfoliated and chemical-vapor-deposition-grown crystals provides direct evidence for the shifting of the valence band maximum from Γ to K, for the case of MoS2 having more than one layer, to the case as predicted by density functional theory.
Journal ArticleDOI
Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides
Daichi Kozawa,Rajeev Kumar,Alexandra Carvalho,Kiran Kumar Amara,Weijie Zhao,Shunfeng Wang,Minglin Toh,Ricardo M. Ribeiro,Ricardo M. Ribeiro,A. H. Castro Neto,Kazunari Matsuda,Goki Eda +11 more
TL;DR: The experimental and simulation results reveal that photoexcited electron-hole pairs in the nesting region spontaneously separate in k-space, relaxing towards immediate band extrema with opposite momentum, implying that the loss of photocarriers due to direct exciton recombination is temporarily suppressed for excitation in resonance with band nesting.
Journal ArticleDOI
Population inversion and giant bandgap renormalization in atomically thin WS2 layers
Alexey Chernikov,Claudia Ruppert,Heather M. Hill,Albert F. Rigosi,Tony F. Heinz,Tony F. Heinz,Tony F. Heinz +6 more
TL;DR: In this paper, atomically thin layers of transition metal dichalcogenides exhibit a disappearance of strong excitonic absorption along with population inversion at the direct gap over a spectral range of hundreds of meV after pulsed photoexcitation.
Journal Article
Observation of Rapid Exciton-Exciton Annihilation in Monolayer Molybdenum Disulfide
Dezheng Sun,Yi Rao,Georg A. Reider,Gugang Chen,Yumeng You,Louis Br 'ezin,Avetik Harutyunyan,Tony F. Heinz +7 more
TL;DR: In this article, the existence of efficient exciton-exciton annihilation, a four-body interaction, in monolayer MoS2 was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density.
Journal ArticleDOI
Room-temperature ultrafast carrier and spin dynamics in GaAs probed by the photoinduced magneto-optical Kerr effect
Aleksei Kimel,Florian F. L. Bentivegna,V. N. Gridnev,Victor V. Pavlov,Roman V. Pisarev,T.H.M. Rasing +5 more
TL;DR: In this article, the picosecond and subpicosecond dynamics of spins in intrinsic and n-doped GaAs were investigated at room temperature using the time-resolved, pump and probe, photoinduced, near-resonant magneto-optical Kerr effect between 1.44 and 1.63 eV.