Patent
Large area silicon cone arrays fabrication and cone based nanostructure modification
TLDR
In this article, a method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods, including silicon substrate as the silicon source, and metal foils are used as catalyst.Abstract:
A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.read more
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Patent
Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
Jun Liu,Michael P. Violette +1 more
TL;DR: Memory devices having variable resistance material include an electrode comprising a single nanowire as mentioned in this paper, and such methods may comprise establishing contact between one end of a single wire and a volume of variable resistance materials in a memory cell.
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Electrode for an ionization chamber and method producing the same
TL;DR: In this paper, an electrode for an ionization chamber and an ionisation chamber including an electrode are provided wherein the electrode comprises a substrate comprising a first material, and a plurality of nanowires extending from the substrate and manufactured by processing the first material of the substrate.
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Method for the organised growth of nanostructures
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Methods of forming memory devices having electrodes comprising nanowires
Jun Liu,Michael P. Violette +1 more
TL;DR: Memory devices having variable resistance material include an electrode comprising a single nanowire as discussed by the authors, which may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single Nanowire and a volume of variable resistance materials in a memory cell.
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Methods of operating memory devices and electronic systems
Jun Liu,Michael P. Violette +1 more
TL;DR: Memory devices having variable resistance material include an electrode comprising a single nanowire as mentioned in this paper, and such methods may comprise establishing contact between one end of a single wire and a volume of variable resistance materials in a memory cell.
References
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Journal ArticleDOI
Fabrication of silicon cones and pillars using rough metal films as plasma etching masks
Katrin Seeger,Richard E. Palmer +1 more
TL;DR: In this paper, a simple fabrication process was developed which allows the production of nanoscale silicon structures, with diameters as small as 5 nm, by using rough silver films as an etching mask for reactive ion etching.
Journal ArticleDOI
Ion beam texturing
TL;DR: Wehner and Hajicek as discussed by the authors reported that a microscopic surface texture could be created by sputter etching a surface while simultaneously sputter depositing a lower sputter yield material onto the surface.
Journal ArticleDOI
Ion‐bombardment‐induced whisker formation on graphite
TL;DR: In this paper, the formation of graphite whiskers under ion bombardment has been studied and it is shown that the growth rate of the whiskers grows parallel to the ion beam.
Journal ArticleDOI
The production of regular pyramids on argon ion bombarded surfaces of copper crystals
TL;DR: In this paper, it was shown that pyramids are of such regular size, shape and spacing that light is selectively absorbed and for 40 keV argon ion bombardment, only light of red colour is reflected from an initially plane surface.
Journal ArticleDOI
High-density silicon and silicon nitride cones
TL;DR: In this article, high-density cone-shaped silicon and silicon nitride have been synthesized on Si(1/0/0) substrates via plasma-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen, hydrogen and methane.