Proceedings ArticleDOI
Large-signal MESFET characterization using harmonic balance
B.R. Epstein,S.M. Perlow,D.L. Rhodes,J.L. Schepps,M.M. Ettenberg,Russell R. Barton +5 more
- Vol. 1988, pp 1045-1048
TLDR
In this article, a method that combines large-signal load tuning (i.e., load-pull) measurements with harmonic balance and optimization techniques to characterize GaAs MESFET devices is described.Abstract:
A method is described that combines large-signal load tuning (i.e. load-pull) measurements with harmonic balance and optimization techniques to characterize GaAs MESFET devices. An important advantage of the method is that device model parameters are obtained at the frequencies at which the device will operate in circuits. Consequently, ambiguities regarding any frequency dependencies of the parameters are eliminated, thereby improving the accuracy of the device model and simulation. The method is best suited as a supplement to previously reported DC and small-signal parameter extraction methods, and is also applicable for the characterization of other power device types, including bipolar-junction transistors (BJTs). >read more
Citations
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Journal ArticleDOI
Measurement of magnitude and phase of harmonics generated in nonlinear microwave two-ports
TL;DR: In this paper, a method for simultaneously measuring the magnitude and phase of the harmonics generated by a microwave two-port system is presented, which can be built for any frequency.
Journal ArticleDOI
Efficient large-signal FET parameter extraction using harmonics
TL;DR: In this paper, an accurate and truly nonlinear large-signal parameter extraction approach is presented, using not only DC bias and fundamental frequency but also higher harmonic responses, and an automatic weight assignment algorithm enhancing parameter extraction is given.
Journal ArticleDOI
Parallel computation for microwave circuit simulation
D.L. Rhodes,B.S. Perlman +1 more
TL;DR: The results of implementing a harmonic balance simulator, AGILE, on a variety of massively parallel computers (MPCs) is given and a key aspect is the description of the variety of algorithms used for each computer and the results obtained.
Journal ArticleDOI
Large‐signal microwave transistor modeling using multiharmonic load‐pull measurements
TL;DR: In this paper, a method of transistor parameter extraction using multiharmonic Load-Pull (MHLP) measurements completed with modified harmonic balance calculations is presented, where the parameters of the nonlinear elements of the transistor are obtained solely from large-signal measurements at the fundamental and the generated harmonic frequencies.
Journal ArticleDOI
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions
TL;DR: In this paper, a new error function is proposed for equivalent circuit model parameter optimization, which can be configured so as to obtain models tailored to specific large-signal applications, and experimental results are provided for a GaAs microwave pseudomorphic HEMT model aimed at the design of highly linear power amplifiers.
References
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Journal ArticleDOI
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers
W.R. Curtice,M. Ettenberg +1 more
TL;DR: In this article, a nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data.
Journal ArticleDOI
Determination of the basic device parameters of a GaAs MESFET
TL;DR: In this paper, the active channel properties of a gallium arsenide (GaAs) metal-semiconductor field effect transistor (mesfet) were determined using simple analytical expressions developed in terms of the geometrical and material parameters of a device.
Journal ArticleDOI
Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics
W.R. Curtice,R.L. Camisa +1 more
TL;DR: In this article, a procedure for producing accurate and unique small-signal equivalent circuit models for carrier-mounted GaAs FET's is presented, which utilizes zero drain-source bias S parmeter tests to determine accurate values of carrier parasitics, and dc measurements to evaluate the FETs gate, source, and drain resistances.
New algorithms for the automated microwave tuner test system
TL;DR: Turner automatise a commande par ordinateur for l'adaptation des impedances de source and de charge, and optimizes des caracteristiques d'amplificateurs hyperfrequence.
Proceedings ArticleDOI
Midas a New Microwave/RF CAD Program
D. Rhodes,S. Perlow +1 more
TL;DR: A new software CAD tool for microwave RF network design, MIDAS, allows use of algebriac expressions to define and value necessary for network analysis, and is fully integrated with PLANA, a network measurement program, allowing PLANA networks to be sub-nets of MIDAS.
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