Journal ArticleDOI
Laser ablated Ni-doped HfO2 thin films: Room temperature ferromagnets
TLDR
In this paper, Ni-doped HfO2 thin films were fabricated under a wide range of growth conditions and showed ferromagnetism above room temperature, with the largest magnetic moment of 2.7μB∕Ni.Abstract:
Laser ablated Ni-doped HfO2 thin films fabricated under a wide range of growth conditions all showed ferromagnetism above room temperature. However, the films deposited at 800°C under an oxygen partial pressure of 10−6Torr have the largest magnetic moment of 2.7μB∕Ni. Ni-doped HfO2 films also well demonstrate a large anisotropy. Magnetic force microscopy measurements confirmed that Ni-doped HfO2 films are real room temperature ferromagnets with a domain structure, and that the size of magnetic domains is larger than 10μm.read more
Citations
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Journal ArticleDOI
Observation of ferromagnetism at room temperature in ZnO thin films
TL;DR: In this paper, room-temperature ferromagnetic magnetism has been observed in laser-ablated ZnO thin films, showing that defects must be located mostly at the surface and/or interface between the film and the substrate.
Journal ArticleDOI
Evidence for magnetism due to oxygen vacancies in Fe-doped HfO2 thin films
TL;DR: In this paper, it was shown that Fe doping is not the main cause for the ferromagnetic properties of HfO2 thin films, but only acts as a catalyst.
Journal ArticleDOI
Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films
TL;DR: In this paper, room temperature ferromagnetism was observed in HfO 2, TiO 2, and In 2 O 3 films grown on yttrium-stabilized zirconia, LaAlO 3, and MgO substrates, respectively.
Journal ArticleDOI
Ferromagnetism in carbon-doped zinc oxide systems.
TL;DR: In this article, the authors report spin-polarized density functional calculations of ferromagnetic properties for a series of ZnO clusters and a solid containing one or two substitutional carbon impurities.
Journal ArticleDOI
Ferromagnetism in Carbon doped Zinc Oxide Systems
TL;DR: The calculations show that the interaction is significantly enhanced in the solid, bringing out the role of dimensionality of the Zn-O network connecting two carbon atoms.
References
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Journal ArticleDOI
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TL;DR: It is shown that thin films of hafnium dioxide (HfO2), an insulating oxide better known as a dielectric layer for nanoscale electronic devices, can be ferromagnetic even without doping.
Journal ArticleDOI
Anisotropic ferromagnetism in substituted zinc oxide.
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Journal ArticleDOI
High temperature ferromagnetism with a giant magnetic moment in transparent co-doped SnO(2-delta).
S. B. Ogale,R. J. Choudhary,James P. Buban,Samuel E. Lofland,S. R. Shinde,Sangeeta Kale,V. N. Kulkarni,Joshua Higgins,C. Lanci,Jeffrey R. Simpson,Nigel D. Browning,S. Das Sarma,H. D. Drew,R. L. Greene,T. Venkatesan +14 more
TL;DR: The occurrence of room temperature ferromagnetism is demonstrated in pulsed laser deposited thin films of Sn(1-x)Co(x)O(2-delta) (x<0.3) and a giant magnetic moment of 7.5+/-0.5 micro(B)/Co, not yet reported in any diluted magnetic semiconductor system.
Journal ArticleDOI
Ferromagnetism in transition-metal-doped Ti O 2 thin films
TL;DR: V, Cr, Fe, Co, and Ni had been chosen to substitute partially for Ti in transition-metal-doped thin films by applying appropriate conditions, which showed a good crystallinity and ferromagnetism above room temperature as discussed by the authors.
Journal ArticleDOI
Effects of post-deposition annealing on the material characteristics of ultrathin HfO2 films on silicon
Ragesh Puthenkovilakam,Y-S Lin,J Choi,Jun Lu,Hans-Olof Blom,Piero Pianetta,D Devine,M Sendler,Jane P. Chang +8 more
TL;DR: In this article, high quality HfO2 films were deposited on p-type Si(100) wafers by an atomic layer deposition scheme, and the deposited films were smooth, amorphous, and stoichiometric, as determined by atomic force microscopy, x-ray diffraction, and xray photoelectron spectroscopy, respectively.